Datasheet > 2SK3591

2SK3591

更新时间： 2022-11-24 21:53:23

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	102K
描述
N-CHANNEL SILICON POWER MOSFET

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数据手册

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2SK3591 数据手册

2SK3591-01MR

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

Super FAP-G Series

Outline Drawings (mm)

Features

TO-220F

High speed switching

Low on-resistance

No secondary breadown

Low driving power

Avalanche-proof

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DCconverters

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)

Item

Symbol

VDS

Ratings

150

Unit

Drain-source voltage

VDSX *5

120

±40

±160

±30

Continuous drain current

Pulsed drain current

Gate-source voltage

Equivalent circuit schematic

ID(puls]

VGS

Non-repetitive Avalanche current IAS *2

Drain(D)

Maximum Avalanche Energy

Maximum Drain-Source dV/dt

Peak Diode Recovery dV/dt

Max. power dissipation

EAS *1

dVDS/dt *4

dV/dt *3

PD Ta=25

Tc=25

Tch

387

kV/µs

°C

2.16

Gate(G)

+150

Source(S)

Operating and storage

temperature range

Isolation voltage

°C

Tstg

-55 to +150

°C

VISO *6

kVrms

*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C

*1 L=335µH, Vcc=48V

*2 Tch 150°C

*4 VDS

150V

*5 VGS=-30V *6 t=60sec f=60Hz

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Symbol

V(BR)DSS

VGS(th)

Test Conditions

Item

ID= 250 A

VGS=0V

Drain-source breakdown voltaget

Gate threshold voltage

150

ID= 250 A

VDS=VGS

3.0

5.0

Tch=25°C

µA

VDS=150V VGS=0V

Zero gate voltage drain current

IDSS

Tch=125°C

250

100

VDS=120V VGS=0V

VGS=±30V VDS=0V

IGSS

RDS(on)

gfs

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

ID=20A VGS=10V

mΩ

ID=20A VDS=25V

VDS=75V

Ciss

Coss

Crss

td(on)

1940

310

2910

465

VGS=0V

Output capacitance

f=1MHz

Reverse transfer capacitance

Turn-on time ton

VCC=48V ID=20A

VGS=10V

td(off)

Turn-off time toff

RGS=10 Ω

VCC=75V

Total Gate Charge

22.5

QGS

QGD

IAV

ID=40A

Gate-Source Charge

Gate-Drain Charge

VGS=10V

L=100µH Tch=25°C

Avalanche capability

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

1.10

1.65

VSD

IF=40A VGS=0V Tch=25°C

IF=40A VGS=0V

-di/dt=100A/µs

0.14

0.77

trr

Qrr

µs

µC

Tch=25°C

Thermalcharacteristics

Item

Symbol

Test Conditions

Min.

Typ.

Max. Units

Rth(ch-c)

channel to case

1.786

°C/W

Thermal resistance

Rth(ch-a)

channel to ambient

58.0

°C/W

www.fujielectric.co.jp/denshi/scd

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