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2SK3589 PDF预览

2SK3589

更新时间: 2024-01-18 04:22:50
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
4页 104K
描述
N-CHANNEL SILICON POWER MOSFET

2SK3589 数据手册

 浏览型号2SK3589的Datasheet PDF文件第2页浏览型号2SK3589的Datasheet PDF文件第3页浏览型号2SK3589的Datasheet PDF文件第4页 
2SK3589-01  
FUJI POWER MOSFET  
Super FAP-G Series  
N-CHANNEL SILICON POWER MOSFET  
Outline Drawings (mm)  
Features  
High speed switching  
Low on-resistance  
No secondary breadown  
Low driving power  
Avalanche-proof  
Fig.1  
MARKING  
Fig.1  
Applications  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DCconverters  
DIMENSIONS ARE IN MILLIMETERS.  
Maximum ratings and characteristicAbsolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Note:1. Dimension shown in ( ) is  
reference values.  
MARKING  
Trademark  
Special  
specification  
for customer  
Lot No.  
Type name  
Item  
Symbol  
VDS  
Ratings  
100  
Unit  
V
1 G:Gate
2 S1:Source1  
Drain-source voltage  
3 S2:Source2  
V
VDSX *5  
70  
4 D:Drain  
Tc=25°C  
Ta=25°C  
A
Continuous drain current  
ID  
±50  
A
±6.9 **  
A
Pulsed drain current  
Gate-source voltage  
ID(puls]  
VGS  
±200  
±30  
50  
Equivalent circuit schematic  
V
A
Non-repetitive Avalanche current IAS *2  
D : Drain  
mJ  
kV/µs  
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. power dissipation  
EAS *1  
dVDS/dt *4  
dV/dt *3  
PD Tc=25  
Ta=25  
Tch  
465  
20  
5
kV/µs  
W
G : Gate  
°C  
°C  
123  
2.4  
W
Operating and storage  
temperature range  
+150  
°C  
S1 : Source  
S2 : Source  
Tstg  
-55 to +150  
°C  
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)  
<
<
<
<
*1 L=223µH, Vcc=48V  
*2 Tch 150°C *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C  
=
=
=
=
<
*5 VGS=-30V  
*4 VDS 100V  
=
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Symbol  
V(BR)DSS  
VGS(th)  
Test Conditions  
Item  
µ
ID= 250 A  
VGS=0V  
VDS=VGS  
V
Drain-source breakdown voltaget  
Gate threshold voltage  
100  
µ
ID= 250 A  
V
3.0  
5.0  
25  
Tch=25°C  
µA  
VDS=100V VGS=0V  
VDS=80V VGS=0V  
Zero gate voltage drain current  
IDSS  
Tch=125°C  
250  
100  
25  
IGSS  
RDS(on)  
gfs  
VGS=±30V  
nA  
VDS=0V  
10  
19  
Gate-source leakage current  
Drain-source on-state resistance  
Forward transcondutance  
Input capacitance  
ID=25A VGS=10V  
m  
S
19  
25  
ID=25A VDS=25V  
VDS=75V  
Ciss  
Coss  
Crss  
td(on)  
tr  
1830  
460  
38  
2745  
690  
57  
pF  
VGS=0V  
Output capacitance  
f=1MHz  
Reverse transfer capacitance  
Turn-on time ton  
ns  
VCC=48V ID=25A  
VGS=10V  
20  
30  
35  
53  
50  
75  
td(off)  
tf  
Turn-off time toff  
RGS=10 Ω  
23  
35  
52  
78  
QG  
nC  
VCC=50V  
Total Gate Charge  
16  
24  
QGS  
QGD  
IAV  
ID=50A  
Gate-Source Charge  
Gate-Drain Charge  
18  
27  
VGS=10V  
50  
L=100µH Tch=25°C  
A
Avalanche capability  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
1.10  
1.65  
VSD  
V
IF=50A VGS=0V Tch=25°C  
IF=50A VGS=0V  
-di/dt=100A/µs  
0.1  
0.4  
trr  
Qrr  
µs  
µC  
Tch=25°C  
Thermalcharacteristics  
Min.  
Typ.  
Max. Units  
Item  
Symbol  
Test Conditions  
0.93  
87.0  
52.0  
Rth(ch-c)  
channel to case  
°C/W  
°C/W  
°C/W  
Thermal resistance  
Rth(ch-a)  
channel to ambient  
channel to ambient  
Rth(ch-a) **  
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)  
www.fujielectric.co.jp/denshi/scd  
1

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