Datasheet > 2SK3596-0SJ

2SK3596-0SJ

更新时间： 2022-03-29 22:10:40

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	274K
描述
N-CHANNEL SILICON POWER MOSFET

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数据手册

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2SK3596-0SJ 数据手册

2SK3596-01L,S,SJ

200304

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

Super FAP-G Series

Outline Drawings (mm)

Features

High speed switching

Low on-resistance

No secondary breadown

Low driving power

Avalanche-proof

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DCconverters

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)

Item

Symbol

VDS

Ratings

200

Unit

Drain-source voltage

VDSX *5

170

±45

±180

±30

Equivalent circuit schematic

Continuous drain current

Pulsed drain current

Gate-source voltage

ID(puls]

VGS

Drain(D)

Non-repetitive Avalanche current IAS *2

kV/µs

Maximum Avalanche Energy

Maximum Drain-Source dV/dt

Peak Diode Recovery dV/dt

Max. power dissipation

EAS *1

dVDS/dt *4

dV/dt *3

PD Ta=25

Tc=25

Tch

258.9

Gate(G)

°C

1.67

Source(S)

270

+150

-55 to +150

Operating and storage

temperature range

°C

Tstg

*2 Tch 150°C

*1 L=205µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph

*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C

*5 VGS=-30V

*4 VDS

200V

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Symbol

V(BR)DSS

VGS(th)

Test Conditions

Item

ID= 250 A

VGS=0V

VDS=VGS

Drain-source breakdown voltaget

Gate threshold voltage

200

ID= 250 A

3.0

5.0

µA

Tch=25°C

VDS=200V VGS=0V

VDS=160V VGS=0V

VGS=±30V

VDS=0V

Zero gate voltage drain current

IDSS

Tch=125°C

250

100

IGSS

RDS(on)

gfs

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

ID=15A VGS=10V

mΩ

ID=15A VDS=25V

VDS=75V

12.5

Ciss

Coss

Crss

td(on)

1960

260

2940

390

VGS=0V

Output capacitance

f=1MHz

VCC=48V ID=15A

Reverse transfer capacitance

Turn-on time ton

VGS=10V

td(off)

Turn-off time toff

RGS=10 Ω

76.5

VCC=100V

ID=30A

Total Gate Charge

QGS

QGD

IAV

22.5

Gate-Source Charge

Gate-Drain Charge

VGS=10V

L=205 H Tch=25°C

Avalanche capability

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

1.10

1.65

VSD

IF=30A VGS=0V Tch=25°C

IF=30A VGS=0V

-di/dt=100A/µs

Tch=25°C

0.19

1.4

trr

Qrr

µs

µC

Thermalcharacteristics

Item

Symbol

Test Conditions

Min.

Typ.

Max. Units

Rth(ch-c)

channel to case

0.463

°C/W

Thermal resistance

Rth(ch-a)

channel to ambient

75.0

°C/W

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