Datasheet > 2SK3435-ZJ

2SK3435-ZJ

更新时间： 2024-11-17 23:20:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	81K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 80A I(D) \| TO-263AB

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中文翻译

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2SK3435-ZJ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3435

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

ORDERING INFORMATION

The 2SK3435 is N-channel MOS Field Effect Transistor

designed for high current switching applications.

PART NUMBER

2SK3435

PACKAGE

TO-220AB

TO-262

2SK3435-S

2SK3435-ZJ

FEATURES

TO-263

• Super low on-state resistance

R^DS(on)1= 14 mΩ MAX. (V^GS= 10 V, I^D= 40 A)

R^DS(on)2= 22 mΩ MAX. (V^GS= 4.0 V, I^D= 40 A)

• Low C^iss: C^iss= 3200 pF TYP.

• Built-in gate protection diode

2SK3435-Z

TO-220SMD ^Note

Note TO-220SMD package is produced only

in Japan.

(TO-220AB)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

±20

±80

★

±160

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

(TO-262)

P^T

1.5

T^ch

150

°C

Storage Temperature

T^stg

I^AS

–55 to +150

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

E^AS

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%

(TO-220SMD)

2. Starting T^ch= 25°C, V^DD= 30 V, R^G= 25 Ω, V^GS= 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published April 2001 NS CP(K)

Printed in Japan

D14604EJ2V0DS00 (2nd edition)

1999, 2001

The mark ★ shows major revised points.

12 3 4 5 6 7 8

中文翻译

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