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2SK3301Q PDF预览

2SK3301Q

更新时间: 2024-09-16 12:26:59
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器开关
页数 文件大小 规格书
3页 150K
描述
Switching Regulatorand DC-DC Converter Applications

2SK3301Q 数据手册

 浏览型号2SK3301Q的Datasheet PDF文件第2页浏览型号2SK3301Q的Datasheet PDF文件第3页 
2SK3301  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)  
2SK3301  
Switching Regulatorand DC-DC Converter Applications  
Unit: mm  
Low drain-source ON-resistance: R  
= 15 (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 0.65 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 720 V)  
DS  
DSS  
Enhancement mode: V = 2.4 to 3.4 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
900  
900  
±30  
1
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
2
DP  
Drain power dissipation (Tc = 25°C)  
P
20  
W
D
AS  
AR  
JEDEC  
JEITA  
Single pulse avalanche energy  
E
140  
mJ  
(Note 2)  
Avalanche current  
I
1
2.0  
A
TOSHIBA  
2-7J1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.36 g (typ.)  
T
ch  
150  
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
6.25  
125  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 257 mH, R = 25 Ω,  
V
DD  
ch  
G
I
= 1 A  
AR  
Note 3: Repetitive rating: pulse width limited by max junction temperature  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2011-04-06  

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