2SK3301
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK3301
Switching Regulatorand DC-DC Converter Applications
Unit: mm
•
•
•
•
Low drain-source ON-resistance: R
= 15 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 0.65 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 720 V)
DS
DSS
Enhancement mode: V = 2.4 to 3.4 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
900
900
±30
1
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
2
DP
Drain power dissipation (Tc = 25°C)
P
20
W
D
AS
AR
JEDEC
JEITA
―
―
Single pulse avalanche energy
E
140
mJ
(Note 2)
Avalanche current
I
1
2.0
A
TOSHIBA
2-7J1B
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 0.36 g (typ.)
T
ch
150
Storage temperature range
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
6.25
125
°C/W
°C/W
th (ch-c)
R
th (ch-a)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 90 V, T = 25°C (initial), L = 257 mH, R = 25 Ω,
V
DD
ch
G
I
= 1 A
AR
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2011-04-06