2SK3302(TP)

更新时间： 2024-11-06 13:00:03

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数据手册

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2SK3302(TP) 数据手册

2SK3302

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

2SK3302

Switching Regulator and DC-DC Converter Applications

Unit: mm

•

Low drain-source ON resistance: R

= 11.5 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 0.4 S (typ.)

Low leakage current: I

= 100 μA (max) (V

= 500 V)

DSS

Enhancement model: V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

500

±30

0.5

1.5

1.3

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation

Single pulse avalanche energy

14.3

(Note 2)

JEDEC

―

Avalanche current

0.5

0.13

JEITA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

Weight: 1.9 g (typ.)

2-8MIB

150

Storage temperature range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

96.1

Unit

Thermal resistance, channel to ambient

°C/W

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C, L = 100 mH, R = 25 Ω, I = 0.5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-06

12 3 4 5 6

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