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2SK3309_06 PDF预览

2SK3309_06

更新时间: 2024-11-17 04:26:31
品牌 Logo 应用领域
东芝 - TOSHIBA 稳压器开关
页数 文件大小 规格书
6页 220K
描述
Silicon N Channel MOS Type Switching Regulator Applications

2SK3309_06 数据手册

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2SK3309  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
2SK3309  
Switching Regulator Applications  
Unit: mm  
Low drain-source ON resistance: R  
High forward transfer admittance: |Y | = 4.3 S (typ.)  
= 0.48 (typ.)  
DS (ON)  
fs  
Low leakage current: I  
= 100 μA (max) (V  
= 450 V)  
DSS  
DS  
Enhancement-mode: V = 3.0~5.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
450  
450  
±30  
10  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
40  
DP  
Drain power dissipation (Tc = 25°C)  
P
65  
W
D
AS  
AR  
Single pulse avalanche energy  
E
222  
mJ  
(Note 2)  
JEDEC  
JEITA  
Avalanche current  
I
10  
6.5  
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
ch  
150  
TOSHIBA  
2-10S1B  
Storage temperature range  
T
stg  
55~150  
Weight: 1.5 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage,  
etc.) are within the absolute maximum ratings. Please design the  
appropriate reliability upon reviewing the Toshiba Semiconductor  
Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
1.92  
83.3  
°C/W  
°C/W  
th (ch-c)  
R
th (ch-a)  
Note 1: Please use devise on condition that the channel temperature is  
below 150°C.  
JEDEC  
JEITA  
Note 2:  
V
= 90 V, T = 25°C (initial), L = 3.7 mH, R = 25 Ω,  
= 10 A  
DD ch G  
I
AR  
Note 3: Repetitive rating: Pulse width limited by maximum channel  
temperature  
TOSHIBA  
2-10S2B  
Weight: 1.5 g (typ.)  
This transistor is an electrostatic sensitive device. Please handle with  
caution.  
1
2006-11-06  

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