Datasheet > 2SK3309_06

2SK3309_06

更新时间： 2024-11-06 04:26:31

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	220K
描述
Silicon N Channel MOS Type Switching Regulator Applications

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中文翻译

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2SK3309_06 数据手册

2SK3309

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

2SK3309

Switching Regulator Applications

Unit: mm

•

Low drain-source ON resistance: R

High forward transfer admittance: |Y | = 4.3 S (typ.)

= 0.48 Ω (typ.)

DS (ON)

Low leakage current: I

= 100 μA (max) (V

= 450 V)

DSS

Enhancement-mode: V = 3.0~5.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

450

±30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

222

(Note 2)

JEDEC

JEITA

―

Avalanche current

6.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

TOSHIBA

2-10S1B

Storage temperature range

stg

−55~150

Weight: 1.5 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.92

83.3

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devise on condition that the channel temperature is

below 150°C.

JEDEC

JEITA

―

Note 2:

= 90 V, T = 25°C (initial), L = 3.7 mH, R = 25 Ω,

= 10 A

DD ch G

Note 3: Repetitive rating: Pulse width limited by maximum channel

temperature

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)

This transistor is an electrostatic sensitive device. Please handle with

caution.

2006-11-06

12 3 4 5 6

中文翻译

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与2SK3309_06相关器件

型号	品牌	获取价格	描述	数据表
2SK330BL	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 6MA I(DSS) \| SPAK
2SK330-BL	TOSHIBA	获取价格	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1B, 3 PIN, FET General Purpose Small Sig
2SK330GR	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 2.6MA I(DSS) \| SPAK
2SK330-GR	TOSHIBA	获取价格	暂无描述
2SK330Y	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 1.2MA I(DSS) \| SPAK
2SK3310	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)
2SK3310_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications
2SK3310_09	TOSHIBA	获取价格	Switching Regulator Applications
2SK3312	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK3312_09	TOSHIBA	获取价格	Chopper Regulator, DC?DC Converter and Motor Drive

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