Datasheet > 2SK3320-BL(TE85L,F

2SK3320-BL(TE85L,F

更新时间： 2024-11-19 03:20:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	306K
描述
JFET DUAL N-CH USV

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2SK3320-BL(TE85L,F 数据手册

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2SK3320

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK3320

For Low Noise Audio Amplifier Applications

Unit: mm

•

Two devices in a ultra super mini (five pins) package

High |Y |: |Y | = 15 mS (typ.) (V = 10 V, V = 0)

High breakdown voltage: V

= −50 V

GDS

Super low noise: NF = 1.0dB (typ.)

= 10 V, I = 0.5 mA, f = 1 kHz, R = 1 kΩ)

•

High input impedance: I

= −1 nA (max) (V

= −30 V)

GSS

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Characteristics

Gate-drain voltage

Symbol

Rating

Unit

−50

GDS

Gate current

JEDEC

JEITA

―

Drain power dissipation

200

(Note 1)

Junction temperature

125

°C

TOSHIBA

2-2L1B

Storage temperature range

stg

−55 to 125

Weight: 6.2 mg (typ.)

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

Marking

Pin Assignment (top view)

Start of commercial production

1999-01

2014-03-01

12 3 4 5

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