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2SK3325 PDF预览

2SK3325

更新时间: 2024-11-18 12:53:23
品牌 Logo 应用领域
TYSEMI 栅极
页数 文件大小 规格书
2页 139K
描述
Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)

2SK3325 数据手册

 浏览型号2SK3325的Datasheet PDF文件第2页 
TransistIoCrs  
Product specification  
2SK3325  
TO-263  
Unit: mm  
+0.2  
4.57  
-0.2  
Features  
+0.1  
1.27  
-0.1  
Low gate charge:  
QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)  
Gate voltage rating: 30 V  
Low on-state resistance  
+0.1  
1.27  
-0.1  
0.1max  
RDS(on) = 0.85 Ù MAX. (VGS = 10 V, ID = 5.0 A)  
Avalanche capability ratings  
+0.1  
0.81  
-0.1  
2.54  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to Source Voltage  
Symbol  
Rating  
500  
30  
Unit  
V
VDSS  
VGSS  
Gate to Source Voltage  
V
Drain Current(DC)  
ID(DS)  
A
10  
Drain Current(pulse) *1  
ID(pulse)  
A
40  
1.5  
85  
Total Power Dissipation (TA = 25  
Total Power Dissipation (TC = 25  
Channel Temperature  
)
)
PT  
W
Tch  
Tstg  
IAS  
150  
Storage temperature  
-55 to +150  
10  
Single Avalanche Current *2  
Single Avalanche Energy *2  
*1. PW 10ìs,Dduty cycle 1%.  
A
EAS  
10.7  
mJ  
*2. Starting Tch = 25 , VDD = 150 V, RG = 25 Ù, VGS = 20 V  
0 V  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
4008-318-123  

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