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2SK3325 PDF预览

2SK3325

更新时间: 2024-11-17 22:52:55
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日电电子 - NEC 开关
页数 文件大小 规格书
8页 79K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK3325 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3325  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3325 is N-Channel DMOS FET device that features  
a low gate charge and excellent switching characteristics, and  
designed for high voltage applications such as switching power  
supply, AC adapter.  
PART NUMBER  
2SK3325  
PACKAGE  
TO-220AB  
TO-262  
2SK3325-S  
2SK3325-ZJ  
TO-263  
FEATURES  
Low gate charge:  
G
DD  
GS  
D
Q = 22 nC TYP. (V = 400 V, V = 10 V, I = 10 A)  
(TO-220AB)  
Gate voltage rating: ±30 V  
Low on-state resistance  
DS(on)  
R
GS  
D
= 0.85 MAX. (V = 10 V, I = 5.0 A)  
Avalanche capability ratings  
TO-220AB, TO-262, TO-263 package  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
500  
±30  
V
V
(TO-262)  
DS  
GSS(AC)  
Gate to Source Voltage (V = 0 V)  
V
D(DC)  
I
Drain Current (DC)  
±10  
A
Drain Current (pulse) Note1  
D(pulse)  
I
±40  
A
C
T
Total Power Dissipation (T = 25°C)  
P
85  
W
W
°C  
°C  
A
A
T
P
Total Power Dissipation (T = 25°C)  
1.5  
ch  
Channel Temperature  
T
150  
stg  
Storage Temperature  
T
–55 to +150  
10  
(TO-263)  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
AS  
E
10.7  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1 %  
2. Starting Tch = 25°C, VDD = 150 V, RG = 25, VGS = 20 V 0V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published May 2000 NS CP(K)  
Printed in Japan  
D14264EJ1V0DS00 (1st edition)  
1999, 2000  
©

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