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2SK3326B-S17-AY

更新时间： 2024-11-21 14:50:27
品牌 Logo 应用领域
日电电子 - NEC 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 194K
描述
Power Field-Effect Transistor, 10A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-45F, ISOLATED TO-220, 3 PIN

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2SK3326B-S17-AY 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：compliant
HTS代码：8541.29.00.95风险等级：5.33
雪崩能效等级（Eas）：10.7 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：500 V
最大漏极电流 (ID)：10 A最大漏源导通电阻：0.85 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：40 A认证状态：Not Qualified
表面贴装：NO端子面层：MATTE TIN
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SK3326B-S17-AY 数据手册

 浏览型号2SK3326B-S17-AY的Datasheet PDF文件第2页浏览型号2SK3326B-S17-AY的Datasheet PDF文件第3页浏览型号2SK3326B-S17-AY的Datasheet PDF文件第4页浏览型号2SK3326B-S17-AY的Datasheet PDF文件第5页浏览型号2SK3326B-S17-AY的Datasheet PDF文件第6页浏览型号2SK3326B-S17-AY的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3326B  
SWITCHING  
N-CHANNEL POWER MOSFET  
DESCRIPTION  
The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics,  
and designed for high voltage applications such as switching power supply, AC adapter.  
FEATURES  
(Isolated TO-220)  
• Low gate charge  
QG = 20 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)  
• Gate voltage rating : ±30 V  
• Low on-state resistance  
RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A)  
• Avalanche capability ratings  
ORDERING INFORMATION  
PART NUMBER  
LEAD PLATING  
Pure Sn (Tin)  
PACKING  
PACKAGE  
2SK3326B-S17-AY Note  
Tube 50 p/tube  
Isolated TO-220 (MP-45F) typ. 2.2 g  
Note Pb-free (This product does not contain Pb in external electrode.)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
500  
±30  
V
V
±10  
A
±40  
A
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
2.0  
W
W
°C  
°C  
A
PT2  
40  
Tch  
150  
Storage Temperature  
Tstg  
−55 to +150  
10  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
10.7  
mJ  
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%  
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18430EJ2V0DS00 (2nd edition)  
Date Published April 2007 NS CP (K)  
Printed in Japan  
2006  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
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