2SK3342(SM)

更新时间： 2024-11-21 13:04:27

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东芝 - TOSHIBA		晶体转换器稳压器开关晶体管功率场效应晶体管脉冲电机驱动
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中文翻译

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数据手册

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2SK3342(SM) 数据手册

2SK3342

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3342

Unit: mm

Switching Regulator and DC-DC Converter Applications

6.5 ± 0.2

5.2 ± 0.2

Motor Drive Applications

0.6 MAX.

z Low drain-source ON resistance

z High forward transfer admittance

: R

= 0.8 Ω (typ.)

DS (ON)

: |Y | = 4.5 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 250 V)

DSS

1.1 ± 0. 2

: V = 1.5 to 3.5 V (V

= 10 V, I = 1 mA)

0.8 MAX.

0.6 MAX.

1.05 MAX.

2 3

0.6 ± 0.15

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

250

±20

4.5

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

2.3 ± 0.15 2.3 ± 0.15

1. GATE

GSS

2. DRAIN

DC (Note 1)

Pulse (Note 1)

（HEAT SINK）

Drain current

3. SOURSE

Drain power dissipation (Tc = 25°C)

JEDEC

—

Single pulse avalanche energy

JEITA

(Note 2)

Avalanche current

4.5

2.0

TOSHIBA

2-7J1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 0.36 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

6.25

125

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 50 V, T = 25°C (initial), L = 4.28 mH, R = 25 Ω,

= 4.5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2010-02-05

12 3 4 5 6

中文翻译

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与2SK3342(SM)相关器件

型号	品牌	获取价格	描述	数据表
2SK3342(SMD)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 4.5A I(D) \| TO-252AA
2SK3342(TE16L1)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,4.5A I(D),TO-252VAR
2SK3342(TE16L1,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,4.5A I(D),TO-252VAR
2SK3342_07	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Driv
2SK3342_10	TOSHIBA	获取价格	Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SK3348	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Switching
2SK3348	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Switching
2SK3349	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Switching
2SK334A	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 300UA I(DSS)
2SK334B	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 800UA I(DSS)

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