Datasheet > 2SK3342(TE16L1)

2SK3342(TE16L1)

更新时间： 2024-11-22 07:22:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	231K
描述
TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,4.5A I(D),TO-252VAR

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2SK3342(TE16L1) 技术参数

是否Rohs认证：	不符合	生命周期：	Lifetime Buy
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	4.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	20 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

2SK3342(TE16L1) 数据手册

2SK3342

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3342

Unit: mm

Switching Regulator and DC-DC Converter Applications

6.5 ± 0.2

5.2 ± 0.2

Motor Drive Applications

0.6 MAX.

z Low drain-source ON resistance

z High forward transfer admittance

: R

= 0.8 Ω (typ.)

DS (ON)

: |Y | = 4.5 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 250 V)

DSS

1.1 ± 0. 2

: V = 1.5 to 3.5 V (V

= 10 V, I = 1 mA)

0.8 MAX.

0.6 MAX.

1.05 MAX.

2 3

0.6 ± 0.15

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

250

±20

4.5

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

2.3 ± 0.15 2.3 ± 0.15

1. GATE

GSS

2. DRAIN

DC (Note 1)

Pulse (Note 1)

（HEAT SINK）

Drain current

3. SOURSE

Drain power dissipation (Tc = 25°C)

JEDEC

—

Single pulse avalanche energy

JEITA

(Note 2)

Avalanche current

4.5

2.0

TOSHIBA

2-7J1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 0.36 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

6.25

125

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 50 V, T = 25°C (initial), L = 4.28 mH, R = 25 Ω,

= 4.5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2010-02-05

12 3 4 5 6

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与2SK3342(TE16L1)相关器件

型号	品牌	获取价格	描述	数据表
2SK3342(TE16L1,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,4.5A I(D),TO-252VAR
2SK3342_07	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Driv
2SK3342_10	TOSHIBA	获取价格	Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SK3348	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Switching
2SK3348	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Switching
2SK3349	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Switching
2SK334A	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 300UA I(DSS)
2SK334B	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 800UA I(DSS)
2SK334C	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 1.5MA I(DSS)
2SK334N11	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 60UA I(DSS)

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