5秒后页面跳转
2SK3320-Y PDF预览

2SK3320-Y

更新时间: 2024-11-20 21:14:59
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
5页 300K
描述
TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, ULTRA SUPER MINI, 2-2L1B, USV, 5 PIN, FET General Purpose Small Signal

2SK3320-Y 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:unknown
HTS代码:8541.21.00.95风险等级:5.26
其他特性:LOW NOISE配置:COMMON SOURCE, 2 ELEMENTS
FET 技术:JUNCTIONJESD-30 代码:R-PDSO-G5
JESD-609代码:e0元件数量:2
端子数量:5工作模式:DEPLETION MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SK3320-Y 数据手册

 浏览型号2SK3320-Y的Datasheet PDF文件第2页浏览型号2SK3320-Y的Datasheet PDF文件第3页浏览型号2SK3320-Y的Datasheet PDF文件第4页浏览型号2SK3320-Y的Datasheet PDF文件第5页 
2SK3320  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK3320  
For Low Noise Audio Amplifier Applications  
Unit: mm  
Two devices in a ultra super mini (five pins) package  
High |Y |: |Y | = 15 mS (typ.) (V = 10 V, V = 0)  
fs  
fs  
DS  
GS  
High breakdown voltage: V  
= 50 V  
GDS  
Super low noise: NF = 1.0dB (typ.)  
(V  
DS  
= 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k)  
D
G
High input impedance: I  
= 1 nA (max) (V  
= 30 V)  
GSS  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
50  
V
GDS  
Gate current  
I
10  
mA  
G
JEDEC  
JEITA  
P
D
Drain power dissipation  
200  
mW  
(Note 1)  
Junction temperature  
T
125  
°C  
°C  
j
TOSHIBA  
2-2L1B  
Storage temperature range  
T
stg  
55~125  
Weight: 6.2 mg (typ.)  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Marking  
Pin Assignment (top view)  
1
2007-11-01  

与2SK3320-Y相关器件

型号 品牌 获取价格 描述 数据表
2SK3321 TOSHIBA

获取价格

N CHANNEL JUNCTION TYPE (GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE
2SK3321GR TOSHIBA

获取价格

TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
2SK3321R TOSHIBA

获取价格

TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
2SK3321Y TOSHIBA

获取价格

暂无描述
2SK3322 NEC

获取价格

SWITCHING N-CHANNEL POWER MOSFET
2SK3322 TYSEMI

获取价格

Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A)
2SK3322 KEXIN

获取价格

MOS Field Effect Transistor
2SK3322-S NEC

获取价格

SWITCHING N-CHANNEL POWER MOSFET
2SK3322-Z-AZ RENESAS

获取价格

2SK3322-Z-AZ
2SK3322-Z-E1-AZ RENESAS

获取价格

2SK3322-Z-E1-AZ