Datasheet > 2SK3313_10

2SK3313_10

更新时间： 2024-11-06 07:32:31

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动
页数	文件大小	规格书
6页	414K
描述
Chopper Regulator and DC−DC Converter Applications Motor Drive Applications

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中文翻译

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数据手册

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2SK3313_10 数据手册

2SK3313

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3313

Chopper Regulator and DC−DC Converter Applications

Unit: mm

Motor Drive Applications

z Fast reverse recovery time

: t = 90 ns (typ.)

z Built-in high-speed free-wheeling diode

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 0.5 Ω (typ.)

DS (ON)

: |Y | = 8.5 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

JEDEC

JEITA

—

SC-67

2-10R1B

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

TOSHIBA

324

(Note 2)

Weight: 1.9 g (typ.)

Avalanche current

4.0

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.125

62.5

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 3.83 mH, R = 25 Ω, I

= 12 A

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2010-04-13

12 3 4 5 6

中文翻译

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与2SK3313_10相关器件

型号	品牌	获取价格	描述	数据表
2SK3314	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI−MOSV)
2SK3314(Q)	TOSHIBA	获取价格	MOSFET N-CH 500V 15A 2-16C1B
2SK3314_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator and DC−DC Converter Applications Motor
2SK3314_10	TOSHIBA	获取价格	Chopper Regulator and DC−DC Converter Applications Motor Drive Applications
2SK3316	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3316_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications
2SK3318	PANASONIC	获取价格	Silicon N-channel power MOSFET
2SK331A	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 300UA I(DSS) \| SO
2SK331B	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 800UA I(DSS) \| SO
2SK331C	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 1.5MA I(DSS) \| FP

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