2SK3314(Q)

更新时间： 2024-09-16 13:04:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体转换器稳压器晶体管功率场效应晶体管开关脉冲电机驱动局域网
页数	文件大小	规格书
6页	413K
描述
MOSFET N-CH 500V 15A 2-16C1B

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SK3314(Q) 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	unknown
Factory Lead Time：	12 weeks	风险等级：	5.68
配置：	Single	最大漏极电流 (Abs) (ID)：	15 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	150 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

2SK3314(Q) 数据手册

2SK3314

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3314

Chopper Regulator and DC−DC Converter Applications

Unit: mm

Motor Drive Applications

z Fast reverse recovery time

: t = 105 ns (typ.)

z Built-in high-speed free-wheeling diode

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 0.35 Ω (typ.)

DS (ON)

: |Y | = 9.9 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

1. GATE

DGR

2. DRAIN (HEAT SINK)

3. SOURCE

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

150

Single pulse avalanche energy

630

TOSHIBA

2-16C1B

(Note 2)

Avalanche current

Weight: 4.6 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 4.76 mH, R = 25 Ω, I

= 15 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostaticsensitive device.

Please handle with caution.

2010-03-07

12 3 4 5 6

中文翻译

下载PDF

与2SK3314(Q)相关器件

型号	品牌	获取价格	描述	数据表
2SK3314_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator and DC−DC Converter Applications Motor
2SK3314_10	TOSHIBA	获取价格	Chopper Regulator and DC−DC Converter Applications Motor Drive Applications
2SK3316	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3316_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Switching Regulator Applications
2SK3318	PANASONIC	获取价格	Silicon N-channel power MOSFET
2SK331A	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 300UA I(DSS) \| SO
2SK331B	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 800UA I(DSS) \| SO
2SK331C	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 1.5MA I(DSS) \| FP
2SK332	SANYO	获取价格	SILICON N CHANNEL TRANSISTOR
2SK3320	TOSHIBA	获取价格	N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

与2SK3314(Q)相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

9
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

7
SL74HC10N：高性能三输入与非门解析
2024-09-03

90
AIC1781A 电池充电控制器深度解析
2024-09-03

80

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK3314(Q)

2SK3314(Q) 技术参数

2SK3314(Q) 数据手册

与2SK3314(Q)相关器件

与2SK3314(Q)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK3314(Q)

2SK3314(Q) 技术参数

2SK3314(Q) 数据手册

与2SK3314(Q)相关器件

与2SK3314(Q)相关文章

您还可以找

您在本页遇到什么问题？