Datasheet > 2SK3314_10

2SK3314_10

更新时间： 2024-11-06 07:32:31

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动
页数	文件大小	规格书
6页	413K
描述
Chopper Regulator and DC−DC Converter Applications Motor Drive Applications

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中文翻译

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2SK3314_10 数据手册

2SK3314

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3314

Chopper Regulator and DC−DC Converter Applications

Unit: mm

Motor Drive Applications

z Fast reverse recovery time

: t = 105 ns (typ.)

z Built-in high-speed free-wheeling diode

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 0.35 Ω (typ.)

DS (ON)

: |Y | = 9.9 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 500 V)

DSS

: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

1. GATE

DGR

2. DRAIN (HEAT SINK)

3. SOURCE

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

150

Single pulse avalanche energy

630

TOSHIBA

2-16C1B

(Note 2)

Avalanche current

Weight: 4.6 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 4.76 mH, R = 25 Ω, I

= 15 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostaticsensitive device.

Please handle with caution.

2010-03-07

12 3 4 5 6

中文翻译

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2SK331A	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 300UA I(DSS) \| SO
2SK331B	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 800UA I(DSS) \| SO
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