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2SK3320-BL(T5LKMCF PDF预览

2SK3320-BL(T5LKMCF

更新时间: 2024-11-20 14:39:27
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
5页 306K
描述
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET

2SK3320-BL(T5LKMCF 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code:unknown风险等级:5.64
Is Samacsys:N其他特性:LOW NOISE
配置:COMMON SOURCE, 2 ELEMENTSFET 技术:JUNCTION
JESD-30 代码:R-PDSO-G5元件数量:2
端子数量:5工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SK3320-BL(T5LKMCF 数据手册

 浏览型号2SK3320-BL(T5LKMCF的Datasheet PDF文件第2页浏览型号2SK3320-BL(T5LKMCF的Datasheet PDF文件第3页浏览型号2SK3320-BL(T5LKMCF的Datasheet PDF文件第4页浏览型号2SK3320-BL(T5LKMCF的Datasheet PDF文件第5页 
2SK3320  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK3320  
For Low Noise Audio Amplifier Applications  
Unit: mm  
Two devices in a ultra super mini (five pins) package  
High |Y |: |Y | = 15 mS (typ.) (V = 10 V, V = 0)  
fs  
fs  
DS  
GS  
High breakdown voltage: V  
= 50 V  
GDS  
Super low noise: NF = 1.0dB (typ.)  
(V  
DS  
= 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k)  
D
G
High input impedance: I  
= 1 nA (max) (V  
= 30 V)  
GSS  
GS  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
50  
V
GDS  
Gate current  
I
10  
mA  
G
JEDEC  
JEITA  
P
D
Drain power dissipation  
200  
mW  
(Note 1)  
Junction temperature  
T
125  
°C  
°C  
j
TOSHIBA  
2-2L1B  
Storage temperature range  
T
stg  
55 to 125  
Weight: 6.2 mg (typ.)  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Marking  
Pin Assignment (top view)  
Start of commercial production  
1999-01  
1
2014-03-01  

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