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2SK3305B-S19-AY PDF预览

2SK3305B-S19-AY

更新时间: 2024-11-19 19:42:55
品牌 Logo 应用领域
日电电子 - NEC 开关脉冲晶体管
页数 文件大小 规格书
7页 190K
描述
Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, MP-25, 3 PIN

2SK3305B-S19-AY 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:LEAD FREE, MP-25, 3 PINReach Compliance Code:compliant
风险等级:5.72雪崩能效等级(Eas):125 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):5 A
最大漏源导通电阻:1.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSSO-G3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3305B-S19-AY 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3305B  
SWITCHING  
N-CHANNEL POWER MOSFET  
DESCRIPTION  
The 2SK3305B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and  
designed for high voltage applications such as switching power supply, AC adapter.  
FEATURES  
Low gate charge  
QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)  
Gate voltage rating : 30 V  
Low on-state resistance  
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)  
Avalanche capability ratings  
ORDERING INFORMATION  
PART NUMBER  
2SK3305B-S19-AY Note  
LEAD PLATING  
Pure Sn (Tin)  
PACKING  
PACKAGE  
Tube 50 p/tube  
TO-220AB (MP-25) typ. 1.9 g  
Note Pb-free (This product does not contain Pb in external electrode.)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
500  
V
V
(TO-220AB)  
30  
5
20  
A
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation  
75  
W
W
°C  
°C  
A
PT2  
1.5  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
55 to +150  
5.0  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
125  
mJ  
Notes 1. PW 10 μs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18445EJ1V0DS00 (1st edition)  
Date Published November 2006 NS CP (K)  
Printed in Japan  
2006  

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