生命周期: | Transferred | 零件包装代码: | TO-3P |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.36 |
雪崩能效等级(Eas): | 202 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 70 A | 最大漏源导通电阻: | 0.014 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 280 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3309 | TOSHIBA |
获取价格 |
Switching Regulator Applications | |
2SK3309(2-10S1B) | TOSHIBA |
获取价格 |
TRANSISTOR 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, 3 PIN, FET Genera | |
2SK3309_06 | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type Switching Regulator Applications | |
2SK330BL | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SPAK | |
2SK330-BL | TOSHIBA |
获取价格 |
TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1B, 3 PIN, FET General Purpose Small Sig | |
2SK330GR | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 2.6MA I(DSS) | SPAK | |
2SK330-GR | TOSHIBA |
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暂无描述 | |
2SK330Y | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | SPAK | |
2SK3310 | TOSHIBA |
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV) | |
2SK3310_06 | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type Switching Regulator Applications |