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2SK3307-A PDF预览

2SK3307-A

更新时间: 2024-11-17 13:01:59
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 68K
描述
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

2SK3307-A 技术参数

生命周期:Transferred零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.36
雪崩能效等级(Eas):202 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):70 A最大漏源导通电阻:0.014 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):280 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK3307-A 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3307  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
The 2SK3307 is N-channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-3P  
2SK3307  
FEATURES  
Super low on-state resistance:  
RDS(on)1 = 9.5 mMAX. (VGS = 10 V, ID = 35 A)  
RDS(on)2 = 14 mMAX. (VGS = 4.0 V, ID = 35 A)  
Low Ciss: Ciss = 4650 pF TYP.  
Built-in gate protection diode  
(TO-3P)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage  
VDSS  
VGSS(AC)  
ID(DC)  
ID(pulse)  
PT1  
60  
±20  
V
V
Gate to Source Voltage  
Drain Current (DC)  
±70  
A
Drain Current (pulse) Note1  
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
±280  
120  
A
W
W
°C  
°C  
A
PT2  
3.0  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
45  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
202  
mJ  
Notes 1. PW 10 µs, Duty cycle 1%  
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 V 0 V  
THERMAL RESISTANCE  
Channel to Case  
Rth(ch-C)  
Rth(ch-A)  
1.04  
41.7  
°C/W  
°C/W  
Channel to Ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published March 2001 NS CP(K)  
Printed in Japan  
D14129EJ3V0DS00 (3rd edition)  
The mark shows major revised points.  
1999, 2000  
©

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