Datasheet > 2SK3309

2SK3309

更新时间： 2024-11-16 21:55:19

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
6页	235K
描述
Switching Regulator Applications

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中文翻译

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数据手册

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2SK3309 数据手册

2SK3309

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

2SK3309

Switching Regulator Applications

Unit: mm

Low drain-source ON resistance: R

= 0.48 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 4.3 S (typ.)

= 100 µA (max) (V

Low leakage current: I

= 450 V)

DSS

= 10 V, I = 1 mA)

Enhancement-mode: V = 3.0~5.0 V (V

th DS

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

450

±30

DSS

DGR

GSS

Drain-gate voltage (R

= 20 kW)

Gate-source voltage

(Note 1)

Drain current

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

222

(Note 2)

JEDEC

JEITA

―

Avalanche current

6.5

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-10S1B

150

Weight: 1.5 g (typ.)

Storage temperature range

-55~150

stg

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.92

83.3

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devise on condition that the channel temperature is

below 150°C.

Note 2: V

= 90 V, T = 25°C (initial), L = 3.7 mH, R = 25 W,

= 10 A

Note 3: Repetitive rating: Pulse width limited by maximum channel

temperature

This transistor is an electrostatic sensitive device. Please handle with

caution.

JEDEC

JEITA

―

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)

2002-09-04

12 3 4 5 6

中文翻译

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