是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | TO-263, MP-25ZJ, 3 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.8 | Is Samacsys: | N |
雪崩能效等级(Eas): | 125 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 1.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3305-ZJ-E1-AZ | RENESAS |
获取价格 |
Switching N Channel MOSFET, MP-25ZJ, /Embossed Tape | |
2SK3306 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK3306-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK3306B-S17-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK3307 | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SK3307-A | NEC |
获取价格 |
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Met | |
2SK3309 | TOSHIBA |
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Switching Regulator Applications | |
2SK3309(2-10S1B) | TOSHIBA |
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TRANSISTOR 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, 3 PIN, FET Genera | |
2SK3309_06 | TOSHIBA |
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Silicon N Channel MOS Type Switching Regulator Applications | |
2SK330BL | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SPAK |