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2SK3305-ZJ PDF预览

2SK3305-ZJ

更新时间: 2024-11-16 22:19:15
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 78K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK3305-ZJ 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TO-263, MP-25ZJ, 3 PINReach Compliance Code:compliant
风险等级:5.8Is Samacsys:N
雪崩能效等级(Eas):125 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (ID):5 A最大漏源导通电阻:1.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK3305-ZJ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3305  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3305 is N-Channel DMOS FET device that features a  
low gate charge and excellent switching characteristics, and  
designed for high voltage applications such as switching power  
supply, AC adapter.  
PART NUMBER  
2SK3305  
PACKAGE  
TO-220AB  
TO-262  
2SK3305-S  
2SK3305-ZJ  
TO-263  
FEATURES  
Low gate charge:  
(TO-220AB)  
G
DD  
GS  
D
Q = 13 nC TYP. (V = 400 V, V = 10 V, I = 5.0 A)  
Gate voltage rating: ±30 V  
Low on-state resistance  
DS(on)  
R
GS  
D
= 1.5 MAX. (V = 10 V, I = 2.5 A)  
Avalanche capability ratings  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
500  
±30  
V
V
(TO-262)  
DS  
GSS(AC)  
Gate to Source Voltage (V = 0 V)  
V
D(DC)  
I
Drain Current (DC)  
±5  
A
Drain Current (pulse) Note1  
D(pulse)  
I
±20  
A
C
T
Total Power Dissipation (T = 25°C)  
P
75  
W
W
°C  
°C  
A
A
T
P
Total Power Dissipation (T = 25°C)  
1.5  
ch  
Channel Temperature  
T
150  
stg  
Storage Temperature  
T
–55 to +150  
5.0  
(TO-263)  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
AS  
E
125  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1 %  
2. Starting Tch = 25°C, VDD = 150 V, RG = 25, VGS = 20 V 0V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
D14003EJ1V0DS00 (1st edition)  
Date Published March 2000 NS CP(K)  
Printed in Japan  
1998,2000  
©

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