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2SK3305

更新时间: 2024-11-06 06:23:15
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
1页 44K
描述
MOS Field Effect Transistor

2SK3305 数据手册

  
SMD Type  
MOSFET  
MOS Field Effect Transistor  
2SK3305  
TO-263  
Unit: mm  
+0.2  
4.57  
-0.2  
Features  
+0.1  
1.27  
-0.1  
Low gate charge  
QG = 13 nC TYP. (VDD = 400V, VGS = 10 V, ID = 5.0A)  
Gate voltage rating 30 V  
+0.1  
-0.1  
0.1max  
1.27  
Low on-state resistance  
+0.1  
0.81  
-0.1  
RDS(on) = 1.5  
MAX. (VGS = 10 V, ID = 2.5A)  
2.54  
Avalanche capability ratings  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
500  
30  
Unit  
V
Gate to source voltage  
V
A
5
Drain current  
Idp *  
A
20  
75  
Power dissipation  
TC=25  
TA=25  
PD  
W
1.5  
150  
Channel temperature  
Storage temperature  
Tch  
Tstg  
-55 to +150  
* PW 10 s,Duty Cycle 1%  
Electrical Characteristics Ta = 25  
Parameter  
Drain cut-off current  
Gate leakage current  
Gat cutoff voltage  
Symbol  
Testconditons  
VDS=500V,VGS=0  
Min  
Typ  
Max  
100  
100  
3.5  
Unit  
A
IDSS  
IGSS  
VGS(off)  
Yfs  
VGS= 30V,VDS=0  
VDS=10V,ID=1mA  
VDS=10V,ID=2.5A  
VGS=10V,ID=2.5A  
A
2.5  
1.0  
V
Forward transfer admittance  
Drain to source on-state resistance  
Input capacitance  
3.0  
1.3  
700  
115  
6
S
RDS(on)  
Ciss  
Coss  
Crss  
ton  
1.5  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=10V,VGS=0,f=1MHZ  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
16  
3
tr  
ID=2.5A,VGS(on)=10V,RG=10  
,VDD=150V,RL=60  
Turn-off delay time  
Fall time  
toff  
33  
5.5  
tf  
1
www.kexin.com.cn  

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