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2SK3062 PDF预览

2SK3062

更新时间: 2024-11-17 22:52:55
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日电电子 - NEC 开关
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8页 71K
描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

2SK3062 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3062  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
2SK3062  
This product is N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3062-S  
FEATURES  
Low on-state resistance  
2SK3062-ZJ  
TO-263  
DS(on)1  
GS  
D
R
R
= 8.5 mMAX. (V = 10 V, I = 35 A)  
DS(on)2  
GS  
D
= 12 mMAX. (V = 4.0 V, I = 35 A)  
iss  
iss  
Low C : C = 5200 pF TYP.  
Built-in gate protection diode  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
GS  
DSS  
V
Drain to Source Voltage (V = 0 V)  
60  
V
DS  
GSS(AC)  
GSS(DC)  
Gate to Source Voltage (V = 0 V)  
V
±20  
+20, 10  
±70  
V
V
DS  
Gate to Source Voltage (V = 0 V)  
V
D(DC)  
I
Drain Current (DC)  
A
Drain Current (Pulse) Note1  
D(pulse)  
I
±280  
A
C
T
Total Power Dissipation (T = 25°C)  
P
100  
W
W
°C  
°C  
A
A
T
P
Total Power Dissipation (T = 25°C)  
1.5  
ch  
Channel Temperature  
T
150  
stg  
Storage Temperature  
T
–55 to +150  
35  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
AS  
I
AS  
E
122.5  
mJ  
Notes 1. PW 10 µs, Duty cycle 1 %  
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V  
THERMAL RESISTANCE  
th(ch-C)  
Channel to Case  
R
1.25  
83.3  
°C/W  
°C/W  
th(ch-A)  
R
Channel to Ambient  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 1999 NS CP(K)  
Printed in Japan  
D13101EJ1V0DS00 (1st edition)  
1998,1999  
©

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