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2SK3068(2-10S1B) PDF预览

2SK3068(2-10S1B)

更新时间: 2024-11-11 14:46:23
品牌 Logo 应用领域
东芝 - TOSHIBA 开关脉冲晶体管
页数 文件大小 规格书
6页 461K
描述
TRANSISTOR 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S1B, 3 PIN, FET General Purpose Power

2SK3068(2-10S1B) 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220FL包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
风险等级:5.75雪崩能效等级(Eas):364 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):12 A
最大漏源导通电阻:0.52 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):48 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK3068(2-10S1B) 数据手册

 浏览型号2SK3068(2-10S1B)的Datasheet PDF文件第2页浏览型号2SK3068(2-10S1B)的Datasheet PDF文件第3页浏览型号2SK3068(2-10S1B)的Datasheet PDF文件第4页浏览型号2SK3068(2-10S1B)的Datasheet PDF文件第5页浏览型号2SK3068(2-10S1B)的Datasheet PDF文件第6页 
2SK3068  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK3068  
Chopper Regulator DCDC Converter, and Motor Drive  
Applications  
Unit: mm  
z Low drainsource ON-resistance  
z High forward transfer admittance  
: R  
= 0.4 (typ.)  
DS (ON)  
: |Y | = 9.0 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 500 V)  
DSS  
DS  
: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
500  
500  
±30  
12  
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
A
D
Drain current  
I
48  
A
DP  
JEDEC  
JEITA  
Drain power dissipation (Tc = 25°C)  
P
100  
W
D
AS  
AR  
Single pulse avalanche energy  
E
364  
mJ  
(Note 2)  
TOSHIBA  
2-10S1B  
Avalanche current  
I
12  
10  
A
Weight: 1.5 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate reliability  
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data  
(i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
1.25  
83.3  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (chc)  
th (cha)  
JEDEC  
JEITA  
Thermal resistance, channel to  
ambient  
R
TOSHIBA  
2-10S2B  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 4.3 mH, R = 25 , I = 12 A  
V
DD  
ch  
G
AR  
Weight: 1.5 g (typ.)  
Note 3: Repetitive rating: pulse width limited by maximum channel  
temperature.  
This transistor is an electrostatic-sensitive device.  
Please handle with caution.  
1
2010-04-13  

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