2SK3070

更新时间： 2024-09-10 06:26:27

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
9页	94K
描述
Silicon N Channel MOS FET High Speed Power Switching

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2SK3070 数据手册

2SK3070(L), 2SK3070(S)

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1063-0900

(Previous: ADE-208-684G)

Rev.9.00

Sep 07, 2005

Features

•

Low on-resistance

R_DS(on)=4.5 mΩ typ.

•

Low drive current

4 V gate drive device can be driven from 5 V source

Outline

RENESAS Package code: PRSS0004AE-A

(Package name: LDPAK(L))

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1))

1. Gate

2. Drain

3. Source

4. Drain

Rev.9.00 Sep 07, 2005 page 1 of 8

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
2SK3070(L)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 40V V(BR)DSS \| 75A I(D) \| TO-262VAR
2SK3070(L)\|2SK3070(S)	ETC	获取价格
2SK3070(S)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 40V V(BR)DSS \| 75A I(D) \| TO-263VAR
2SK3070L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3070L-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3070S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3070STL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3072	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SK3074	TOSHIBA	获取价格	N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
2SK3074_07	TOSHIBA	获取价格	SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER