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2SK3067_09 PDF预览

2SK3067_09

更新时间: 2024-11-11 07:32:27
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动器转换器稳压器电机DC-DC转换器
页数 文件大小 规格书
3页 130K
描述
Chopper Regulator, DC?DC Converter and Motor Drive

2SK3067_09 数据手册

 浏览型号2SK3067_09的Datasheet PDF文件第2页浏览型号2SK3067_09的Datasheet PDF文件第3页 
2SK3067  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)  
2SK3067  
Chopper Regulator, DCDC Converter and Motor Drive  
Applications  
Unit: mm  
z Low drainsource ON resistance  
z High forward transfer admittance  
: R  
= 4.2 (typ.)  
DS (ON)  
: |Y | = 1.7 S (typ.)  
fs  
z Low leakage current  
z Enhancement mode  
: I  
= 100 μA (max) (V  
= 600 V)  
DSS  
DS  
: V = 2.0 to 4.0 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
600  
600  
±30  
2
V
V
V
A
A
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
I
D
Pulse (t = 1 ms)  
I
5
DP  
Drain current  
(Note 1)  
JEDEC  
JEITA  
Pulse (t = 100 μs)  
I
8
A
DP  
SC-67  
2-10R1B  
(Note 1)  
TOSHIBA  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
25  
93  
W
D
AS  
AR  
Weight: 1.9 g (typ.)  
E
mJ  
(Note 2)  
Avalanche current  
I
2
2.5  
A
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Max  
Unit  
Thermal reverse, channel to case  
Thermal reverse, channel to ambient  
R
5.0  
°C / W  
°C / W  
th (chc)  
R
62.5  
th (cha)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = 90 V, T = 25°C (initial), L = 41 mH, R = 25 , I = 2 A  
V
DD  
ch  
G
AR  
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2009-09-29  

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