Datasheet > 2SK3065

2SK3065

更新时间： 2024-11-18 06:23:27

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描述
Silicon N-Channel MOSFET

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中文翻译

获取价格

数据手册

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2SK3065 数据手册

SMD Type

MOSFET

Silicon N-Channel MOSFET

2SK3065

SOT-89

Unit: mm

+0.1

-0.1

+0.1

1.50

-0.1

4.50

1.80

+0.1

-0.1

Features

Low on resistance.

High-speed switching.

0.53

Optimum for a pocket resource etc. because of

undervoltage actuation (2.5V actuation).

Driving circuit is easy.

+0.1

0.48

-0.1

+0.1

-0.1

+0.1

0.44

-0.1

Easy to use parallel.

1 Gate

1. Source

It is strong to an electrostatic discharge.

1. Base

+0.1

-0.1

3.00

2 Drain

2. Drain

2. Collector

3 Source

3. Emiitter

3. Gate

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

0.5

Power dissipation

T^C=25

Channel temperature

Storage temperature

T^ch

150

Tstg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Symbol

V^DSS

I^DSS

Testconditons

ID=1mA,VGS=0

Min

Typ

Max

Unit

Drain to source breakdown voltage

Drain cut-off current

VDS=60V,VGS=0

VGS= 20V,VDS=0

VDS=10V,ID=1mA

VDS=10V,ID=1A

V^GS=4V,ID=1A

Gate leakage current

I^GSS

Gate threshold voltage

Forward transfer admittance

V^GS(th)

Yfs

0.8

1.5

0.25 0.32

Drain to source on-state resistance

RDS(on)

VGS=2.5V,ID=1A

0.35 0.45

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Ciss

C^oss

C^rss

t^on

t^r

160

VDS=10V,VGS=0,f=1MHZ

I^D=1A,VGS(on)=4V,RL=30

,VDD=30V,RG=10

Turn-off delay time

Fall time

t^off

120

Marking

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