Datasheet > 2SK30651000

2SK30651000

更新时间： 2024-11-18 04:26:31

品牌	Logo	应用领域
罗姆 - ROHM		开关
页数	文件大小	规格书
4页	88K
描述
Small switching (60V, 2A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK30651000 数据手册

2SK3065

Transistors

Small switching (60V, 2A)

2SK3065

!Features

!External dimensions (Units : mm)

1) Low on resistance.

2) High-speed switching.

+0.2

−0.1

4.5

1.6 0.1

1.5 0.1

3) Optimum for a pocket resource etc. because of

undervoltage actuation (2.5V actuation).

4) Driving circuit is easy.

( )

+0.1

0.4

−0.05

5) Easy to use parallel.

6) It is strong to an electrostatic discharge.

0.5 0.1

3.0 0.2

0.4 0.1

1.5 0.1

0.4 0.1

1.5 0.1

(1) Gate

(2) Drain

(3) Source

ROHM : MPT3

E I A J : SC-62

Abbreviated symbol : KE

!Structure

Silicon N-channel

MOS FET transistor

!Internal equivalent circuit

!Absolute maximum ratings (Ta = 25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Limits

Unit

Drain

DSS

GSS

Continuous

Pulsed

Drain current

∗1

Continuous

Pulsed

Reverse drain

current

Gate

∗1

DRP

0.5

Total power dissipation(Tc=25°C)

Channel temperature

°C

2^∗²

∗Gate

Tch

Tstg

150

Protection

Diode

Source

−55∼+150

Storage temperature

∗1 Pw ≤ 10µs, Duty cycle ≤ 1%

∗2 When mounted on a 40 × 40 × 0.7 mm alumina board.

∗ A protection diode has been built in between the

gate and the source to protect against static

electricity when the product is in use.

Use the protection circuit when rated voltages are

exceeded.

!Electrical characteristics (Ta = 25°C)

Parameter

Symbol Min.

Typ.

Max.

−

Unit

µA

Test Conditions

Gate-source leakage

GSS

(BR)DSS

DSS

−

20V, VDS

1mA, VGS 0V

1mA

= 0V

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

−

1.5

0.32

0.45

−

µA

60V, VGS

GS(th)

0.8

−

10V, I

0.25

0.35

−

1A, VGS

1A, VDS

RDS(on)

DS(on)

Static drain-source on-state

resistance

Ω

−

2.5V

10V

Ω

Yfs



1.5

−

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

∗

iss

oss

rss

d(on)

160

120

−

10V

−

1MHz

−

1A, VDD

30V

−

= 4V

d(off)

−

30Ω

10Ω

Turn-off delay time

Fall time

−

Pw ≤ 300µs, Duty cycle ≤ 1%

∗

12 3 4

中文翻译

下载PDF

与2SK30651000相关器件

型号	品牌	获取价格	描述	数据表
2SK3065T100	ROHM	获取价格	Small switching (60V, 2A)
2SK3066	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 30A I(D) \| SMT
2SK3067	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3067_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK3067_09	TOSHIBA	获取价格	Chopper Regulator, DC?DC Converter and Motor Drive
2SK3068	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK3068(2-10S1B)	TOSHIBA	获取价格	TRANSISTOR 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S1B, 3
2SK3068(2-10S2B)	TOSHIBA	获取价格	TRANSISTOR 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S2B, 3
2SK3068(Q)	TOSHIBA	获取价格	2SK3068(Q)
2SK3068(SM)	TOSHIBA	获取价格	暂无描述

与2SK30651000相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK30651000

2SK30651000 数据手册

与2SK30651000相关器件

与2SK30651000相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK30651000

2SK30651000 数据手册

与2SK30651000相关器件

与2SK30651000相关文章

您还可以找

您在本页遇到什么问题？