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2SK3065T100 PDF预览

2SK3065T100

更新时间: 2024-11-18 03:04:35
品牌 Logo 应用领域
罗姆 - ROHM 晶体开关小信号场效应晶体管
页数 文件大小 规格书
4页 88K
描述
Small switching (60V, 2A)

2SK3065T100 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-62
包装说明:MPT3, SC-62, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:1.68Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):2 A
最大漏极电流 (ID):2 A最大漏源导通电阻:0.45 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-F3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK3065T100 数据手册

 浏览型号2SK3065T100的Datasheet PDF文件第2页浏览型号2SK3065T100的Datasheet PDF文件第3页浏览型号2SK3065T100的Datasheet PDF文件第4页 
2SK3065  
Transistors  
Small switching (60V, 2A)  
2SK3065  
!Features  
!External dimensions (Units : mm)  
1) Low on resistance.  
2) High-speed switching.  
+0.2  
0.1  
4.5  
1.6 0.1  
1.5 0.1  
3) Optimum for a pocket resource etc. because of  
undervoltage actuation (2.5V actuation).  
4) Driving circuit is easy.  
( )  
1
( )  
2
( )  
3
+0.1  
0.4  
0.05  
5) Easy to use parallel.  
6) It is strong to an electrostatic discharge.  
0.5 0.1  
3.0 0.2  
0.4 0.1  
1.5 0.1  
0.4 0.1  
1.5 0.1  
(1) Gate  
(2) Drain  
(3) Source  
ROHM : MPT3  
E I A J : SC-62  
Abbreviated symbol : KE  
!Structure  
Silicon N-channel  
MOS FET transistor  
!Internal equivalent circuit  
!Absolute maximum ratings (Ta = 25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
Limits  
Unit  
V
Drain  
V
DSS  
GSS  
60  
20  
2
V
V
Continuous  
Pulsed  
ID  
A
Drain current  
1  
I
DP  
8
A
Continuous  
Pulsed  
I
DR  
2
A
Reverse drain  
current  
Gate  
1  
I
DRP  
8
A
0.5  
Total power dissipation(Tc=25°C)  
Channel temperature  
P
D
W
°C  
°C  
22  
Gate  
Tch  
Tstg  
150  
Protection  
Diode  
Source  
55∼+150  
Storage temperature  
1 Pw 10µs, Duty cycle 1%  
2 When mounted on a 40 × 40 × 0.7 mm alumina board.  
A protection diode has been built in between the  
gate and the source to protect against static  
electricity when the product is in use.  
Use the protection circuit when rated voltages are  
exceeded.  
!Electrical characteristics (Ta = 25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
10  
Unit  
µA  
V
Test Conditions  
Gate-source leakage  
I
GSS  
(BR)DSS  
DSS  
60  
V
GS  
=
20V, VDS  
1mA, VGS 0V  
0V  
1mA  
4V  
= 0V  
Drain-source breakdown voltage  
Zero gate voltage drain current  
Gate threshold voltage  
V
I
D
=
DS  
DS  
=
=
I
10  
1.5  
0.32  
0.45  
µA  
V
V
V
=
=
60V, VGS  
=
V
GS(th)  
0.8  
10V, I  
D
=
0.25  
0.35  
I
D
D
D
1A, VGS  
1A, VGS  
1A, VDS  
=
=
=
RDS(on)  
DS(on)  
Static drain-source on-state  
resistance  
R
I
=
2.5V  
10V  
Yfs  
1.5  
S
I
=
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
C
iss  
oss  
rss  
d(on)  
160  
85  
25  
20  
50  
120  
70  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
V
f
DS  
GS  
=
=
=
10V  
0V  
C
C
1MHz  
t
t
I
D
=
1A, VDD  
30V  
t
r
V
GS  
= 4V  
d(off)  
R
L
=
30Ω  
10Ω  
Turn-off delay time  
Fall time  
t
f
R
G
=
Pw 300µs, Duty cycle 1%  

2SK3065T100 替代型号

型号 品牌 替代类型 描述 数据表
RJP020N06T100 ROHM

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RHP020N06T100 ROHM

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