Datasheet > 2SK3065

2SK3065

更新时间： 2024-09-10 12:53:23

品牌	Logo	应用领域
TYSEMI		驱动
页数	文件大小	规格书
1页	130K
描述
Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation).

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中文翻译

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数据手册

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2SK3065 数据手册

SSMMDDTTyypppee

MOSFICET

Product specification

2SK3065

SOT-89

Unit: mm

+0.1

4.50

-0.1

+0.1

1.50

-0.1

+0.1

1.80

-0.1

Features

Low on resistance.

High-speed switching.

0.53

Optimum for a pocket resource etc. because of

undervoltage actuation (2.5V actuation).

Driving circuit is easy.

+0.1

0.48

-0.1

+0.1

-0.1

+0.1

0.44

-0.1

Easy to use parallel.

1 Gate

1. Source

It is strong to an electrostatic discharge.

1. Base

+0.1

3.00

-0.1

2 Drain

2. Drain

2. Collector

3 Source

3. Emiitter

3. Gate

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

P^D

0.5

Power dissipation

T^C=25

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Symbol

V^DSS

I^DSS

Testconditons

I^D=1mA,V^GS=0

Min

Typ

Max

Unit

Drain to source breakdown voltage

Drain cut-off current

V^DS=60V,V^GS=0

V^GS= 20V,V^DS=0

V^DS=10V,I^D=1mA

VDS=10V,ID=1A

V^GS=4V,I^D=1A

Gate leakage current

I^GSS

Gate threshold voltage

Forward transfer admittance

V^GS(th)

Y^fs

0.8

1.5

0.25 0.32

Drain to source on-state resistance

R^DS(on)

V^GS=2.5V,I^D=1A

0.35 0.45

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C^iss

C^oss

C^rss

t^on

160

V^DS=10V,V^GS=0,f=1MHZ

I^D=1A,V^GS(on)=4V,R^L=30

,V^DD=30V,R^G=10

Turn-off delay time

Fall time

t^off

120

Marking

http://www.twtysemi.com

sales@twtysemi.com

1 of 1

4008-318-123

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