2SK3062-Z-AZ

更新时间： 2024-11-18 13:02:55

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中文翻译

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数据手册

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2SK3062-Z-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3062

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

ORDERING INFORMATION

PART NUMBER

2SK3062

This product is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

PACKAGE

TO-220AB

TO-262

2SK3062-S

FEATURES

• Low on-state resistance

2SK3062-ZJ

TO-263

DS(on)1

= 8.5 mΩ MAX. (V = 10 V, I = 35 A)

DS(on)2

= 12 mΩ MAX. (V = 4.0 V, I = 35 A)

iss

• Low C : C = 5200 pF TYP.

• Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

DSS

Drain to Source Voltage (V = 0 V)

GSS(AC)

GSS(DC)

Gate to Source Voltage (V = 0 V)

±20

+20, −10

±70

Gate to Source Voltage (V = 0 V)

D(DC)

Drain Current (DC)

Drain Current (Pulse) ^Note1

D(pulse)

±280

Total Power Dissipation (T = 25°C)

100

°C

Total Power Dissipation (T = 25°C)

1.5

Channel Temperature

150

stg

Storage Temperature

–55 to +150

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

122.5

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

2. Starting Tch = 25 °C, R^G= 25 Ω, V^GS= 20 V → 0 V

THERMAL RESISTANCE

th(ch-C)

Channel to Case

1.25

83.3

°C/W

th(ch-A)

Channel to Ambient

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published April 1999 NS CP(K)

Printed in Japan

D13101EJ1V0DS00 (1st edition)

1998,1999

12 3 4 5 6 7 8

中文翻译

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