Datasheet > 2SK3062-Z

2SK3062-Z

更新时间： 2024-02-12 00:24:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	80K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 70A I(D) \| TO-263AB

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中文翻译

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2SK3062-Z 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3062

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

★

DESCRIPTION

ORDERING INFORMATION

The 2SK3062 is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

PART NUMBER

2SK3062

PACKAGE

TO-220AB

TO-262

2SK3062-S

2SK3062-ZJ

2SK3062-Z

FEATURES

• Low on-state resistance

TO-263

R^DS(on)1= 8.5 mΩ MAX. (V^GS= 10 V, I^D= 35 A)

R^DS(on)2= 12 mΩ MAX. (V^GS= 4.0 V, I^D= 35 A)

• Low C^iss: C^iss= 5200 pF TYP.

• Built-in gate protection diode

TO-220SMD

Notes TO-220SMD package is produced only in

Japan

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

(TO-220AB)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (Pulse) ^Note1

V^DSS

V^GSS(AC)

V^GSS(DC)

I^D(DC)

I^D(pulse)

P^T

±20

+20, −10

±70

±280

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

100

°C

(TO-262)

P^T

1.5

T^ch

150

Storage Temperature

T^stg

–55 to +150

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

I^AS

E^AS

122.5

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

2. Starting Tch = 25 °C, V^DD= 30 V, R^G= 25 Ω, V^GS= 20 → 0 V

(TO-263, TO-220SMD)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published April 2001 NS CP(K)

Printed in Japan

D13101EJ2V0DS00 (2nd edition)

1998,1999

The mark ★ shows major revised points.

12 3 4 5 6 7 8

中文翻译

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与2SK3062-Z相关器件

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2SK3062-Z-AZ	NEC	获取价格	暂无描述
2SK3062-Z-E2-AZ	RENESAS	获取价格	2SK3062-Z-E2-AZ
2SK3062-ZJ	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3062-ZJ-AZ	RENESAS	获取价格	2SK3062-ZJ-AZ
2SK3062-ZJ-E1-AZ	RENESAS	获取价格	2SK3062-ZJ-E1-AZ
2SK3064	PANASONIC	获取价格	Silicon N-Channel MOS FET
2SK3065	TYSEMI	获取价格	Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation).
2SK3065	ROHM	获取价格	Small switching (60V, 2A)
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