DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3062
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
★
DESCRIPTION
ORDERING INFORMATION
The 2SK3062 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
PART NUMBER
2SK3062
PACKAGE
TO-220AB
TO-262
2SK3062-S
2SK3062-ZJ
2SK3062-Z
FEATURES
• Low on-state resistance
TO-263
RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
• Low Ciss: Ciss = 5200 pF TYP.
• Built-in gate protection diode
TO-220SMD
Notes TO-220SMD package is produced only in
Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
(TO-220AB)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
VDSS
VGSS(AC)
VGSS(DC)
ID(DC)
ID(pulse)
PT
60
V
±20
V
+20, −10
±70
V
A
±280
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
100
W
W
°C
°C
A
(TO-262)
PT
1.5
Tch
150
Storage Temperature
Tstg
–55 to +150
35
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
122.5
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published April 2001 NS CP(K)
Printed in Japan
D13101EJ2V0DS00 (2nd edition)
1998,1999
©
The mark ★ shows major revised points.