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2SK3062-Z PDF预览

2SK3062-Z

更新时间: 2024-11-17 23:20:39
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 80K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-263AB

2SK3062-Z 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3062  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3062 is N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PART NUMBER  
2SK3062  
PACKAGE  
TO-220AB  
TO-262  
2SK3062-S  
2SK3062-ZJ  
2SK3062-Z  
FEATURES  
Low on-state resistance  
TO-263  
RDS(on)1 = 8.5 mMAX. (VGS = 10 V, ID = 35 A)  
RDS(on)2 = 12 mMAX. (VGS = 4.0 V, ID = 35 A)  
Low Ciss: Ciss = 5200 pF TYP.  
Built-in gate protection diode  
TO-220SMD  
Notes TO-220SMD package is produced only in  
Japan  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
(TO-220AB)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (Pulse) Note1  
VDSS  
VGSS(AC)  
VGSS(DC)  
ID(DC)  
ID(pulse)  
PT  
60  
V
±20  
V
+20, 10  
±70  
V
A
±280  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
100  
W
W
°C  
°C  
A
(TO-262)  
PT  
1.5  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
35  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
122.5  
mJ  
Notes 1. PW 10 µs, Duty cycle 1 %  
2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 , VGS = 20 0 V  
(TO-263, TO-220SMD)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 2001 NS CP(K)  
Printed in Japan  
D13101EJ2V0DS00 (2nd edition)  
1998,1999  
©
The mark shows major revised points.  

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