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2SK3060-Z PDF预览

2SK3060-Z

更新时间: 2024-10-02 04:26:31
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日电电子 - NEC /
页数 文件大小 规格书
8页 89K
描述
MOS FIELD EFFECT TRANSISTOR

2SK3060-Z 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3060  
SWITCHING  
N-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
ORDERING INFORMATION  
PART NUMBER  
2SK3060  
The 2SK3060 is N-Channel MOS Field Effect Transistor  
designed for high current switching applications.  
PACKAGE  
TO-220AB  
TO-262  
2SK3060-S  
FEATURES  
Low on-state resistance  
2SK3060-ZJ  
TO-263  
RDS(on)1 = 13 mMAX. (VGS = 10 V, ID = 35 A)  
RDS(on)2 = 20 mMAX. (VGS = 4.0 V, ID = 35 A)  
Low Ciss: Ciss = 2400 pF TYP.  
Built-in gate protection diode  
2SK3060-Z  
TO-220SMDNote  
Note This package is produced only in Japan.  
(TO-220AB)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
VDSS  
VGSS(AC)  
VGSS(DC)  
ID(DC)  
ID(pulse)  
PT  
60  
V
V
±20  
+20, 10  
±70  
V
A
Drain Current (Pulse) Note1  
±210  
70  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
W
W
°C  
°C  
A
(TO-262)  
PT  
1.5  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
35  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
122.5  
mJ  
Notes 1. PW 10 µs, Duty cycle 1%  
(TO-263, TO-220SMD)  
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 V 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 2001 NS CP(K)  
Printed in Japan  
D13099EJ3V0DS00 (3rd edition)  
1997,2000  
©
The mark shows major revised points.  

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