2SK2315TYUR

更新时间： 2024-11-02 13:04:27

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2SK2315TYUR 数据手册

2SK2315

Silicon N-Channel MOS FET

Application

High speed power switching

Features

•

Low on-resistance

High speed switching

Low drive current

2.5 V gate drive device can be driven from 3 V source.

Suitable for DC-DC converter, motor drive, power switch, solenoid drive

Outline

UPAK

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
2SK2316	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SK2317	SANYO	获取价格	Very High-Speed Switching Applications
2SK2318	SANYO	获取价格	Very High-Speed Switching Applications
2SK2319	TOSHIBA	获取价格	TRANSISTOR 7 A, 800 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
2SK2320	TOSHIBA	获取价格	TRANSISTOR 8.5 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
2SK2321	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 12A I(D) \| TO-263
2SK2322(L)	RENESAS	获取价格	Power Field-Effect Transistor, 0.05ohm, N-Channel, Metal-oxide Semiconductor FET
2SK2322(S)	RENESAS	获取价格	0.05ohm, POWER, FET
2SK2322(S)TL	RENESAS	获取价格	Power Field-Effect Transistor, 15A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Meta
2SK2322(S)TR	RENESAS	获取价格	Power Field-Effect Transistor, 15A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Meta