Datasheet > 2SK2329(L)|2SK2329(S)

2SK2329(L)|2SK2329(S)

更新时间： 2024-01-17 10:50:52

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2SK2329(L)|2SK2329(S) 数据手册

2SK2329(L), 2SK2329(S)

Silicon N-Channel MOS FET

ADE-208-1356 (Z)

1st. Edition

Mar. 2001

Application

High speed power switching

Features

•

Low on-resistance

High speed switching

Low drive current

2.5 V gate drive device can be driven from 3 V source

Suitable for Switching regulator, DC-DC converter

Outline

DPAK-2

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
2SK2329(S)-(1)	RENESAS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2329(S)-(2)	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,10A I(D),TO-252VAR
2SK2329(S)-(3)	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,10A I(D),TO-252VAR
2SK2329(S)TL	RENESAS	获取价格	10A, 30V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2329(S)TR	HITACHI	获取价格	暂无描述
2SK2329-E	RENESAS	获取价格	Silicon N Channel MOS FET
2SK2329L	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK2329S	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK2329S	KEXIN	获取价格	Silicon N-Channel MOSFET
2SK2329S	TYSEMI	获取价格	Low on-resistance High speed switching Suitable for Switching regulator, DC-DC converter