2SK2329

更新时间： 2024-02-10 15:29:54

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2SK2329 技术参数

2SK2329(L), 2SK2329(S)

Silicon N Channel MOS FET

REJ03G1008-0200

(Previous: ADE-208-1356)

Rev.2.00

Sep 07, 2005

Application

High speed power switching

Features

•

Low on-resistance

High speed switching

Low drive current

2.5 V gate drive device can be driven from 3 V source

Suitable for Switching regulator, DC-DC converter

Outline

RENESAS Package code: PRSS0004ZD-B

(Package name: DPAK(L)-(2))

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK(S))

1. Gate

2. Drain

3. Source

4. Drain

Rev.2.00 Sep 07, 2005 page 1 of 7

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
2SK2329(L)	HITACHI	获取价格	Power Field-Effect Transistor, 0.06ohm, N-Channel, Metal-oxide Semiconductor FET, DPAK-3
2SK2329(L)-(2)	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,10A I(D),TO-251VAR
2SK2329(L)\|2SK2329(S)	ETC	获取价格
2SK2329(S)-(1)	RENESAS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2329(S)-(2)	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,10A I(D),TO-252VAR
2SK2329(S)-(3)	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,10A I(D),TO-252VAR
2SK2329(S)TL	RENESAS	获取价格	10A, 30V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2329(S)TR	HITACHI	获取价格	暂无描述
2SK2329-E	RENESAS	获取价格	Silicon N Channel MOS FET
2SK2329L	HITACHI	获取价格	Silicon N-Channel MOS FET