2SK2329S

更新时间： 2024-09-27 22:35:31

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2SK2329S 数据手册

2SK2329(L), 2SK2329(S)

Silicon N-Channel MOS FET

Application

High speed power switching

Features

•

Low on-resistance

High speed switching

Low drive current

2.5 V gate drive device can be driven from 3 V source

Suitable for Switching regulator, DC-DC converter

Outline

DPAK-2

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...10

中文翻译

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型号	品牌	获取价格	描述	数据表
2SK2330(L)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 15A I(D) \| TO-262VAR
2SK2330(S)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 15A I(D) \| TO-263VAR
2SK2330L	ETC	获取价格
2SK2330S	ETC	获取价格
2SK2331	TOSHIBA	获取价格	N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
2SK2331TE12R	TOSHIBA	获取价格	TRANSISTOR X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal
2SK2332	TOSHIBA	获取价格	N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
2SK2332TE12L	TOSHIBA	获取价格	TRANSISTOR X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal
2SK2332TE12R	TOSHIBA	获取价格	TRANSISTOR X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal
2SK2333	SHINDENGEN	获取价格	HVX-2 Series Power MOSFET(700V 6A)