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2SK2350(T) PDF预览

2SK2350(T)

更新时间: 2024-01-27 22:11:48
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 264K
描述
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,8.5A I(D),TO-220AB

2SK2350(T) 技术参数

生命周期:End Of LifeReach Compliance Code:unknown
风险等级:5.76配置:Single
最大漏极电流 (Abs) (ID):8.5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):30 W
子类别:FET General Purpose Power表面贴装:NO
Base Number Matches:1

2SK2350(T) 数据手册

 浏览型号2SK2350(T)的Datasheet PDF文件第2页浏览型号2SK2350(T)的Datasheet PDF文件第3页浏览型号2SK2350(T)的Datasheet PDF文件第4页浏览型号2SK2350(T)的Datasheet PDF文件第5页浏览型号2SK2350(T)的Datasheet PDF文件第6页 
2SK2350  
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)  
2SK2350  
Switching Regulator, DCDC Converter and Motor Drive  
Unit: mm  
Applications  
l 4 V gate drive  
l Low drainsource ON resistance  
l High forward transfer admittance  
: R = 0.26 (typ.)  
DS (ON)  
: |Y | = 8 S (typ.)  
fs  
l Low leakage current  
l Enhancementmode  
: I  
= 100 µA (max) (V  
th DS  
= 200 V)  
= 10 V, I = 1 mA)  
DSS  
DS  
: V = 1.5~3.5 V (V  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drainsource voltage  
V
200  
200  
±20  
8.5  
34  
V
V
DSS  
Draingate voltage (R  
Gatesource voltage  
= 20 k)  
V
GS  
DGR  
V
V
GSS  
DC (Note 1)  
I
A
D
Drain current  
Pulse (Note 1)  
I
A
DP  
JEDEC  
JEITA  
Drain power dissipation (Tc = 25°C)  
Single pulse avalanche energy  
P
30  
W
D
AS  
AR  
SC-67  
2-10R1B  
E
110  
mJ  
(Note 2)  
TOSHIBA  
Avalanche current  
I
8.5  
3
A
Weight: 1.9 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
55~150  
stg  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
4.16  
62.5  
Unit  
Thermal resistance, channel to case  
R
°C / W  
°C / W  
th (chc)  
th (cha)  
Thermal resistance, channel to  
ambient  
R
Note 1: Please use devices on condition that the channel temperature is below 150°C.  
Note 2: V  
DD  
= 50 V, T = 25°C (initial), L = 2.47 mH, R = 25 , I  
= 8.5 A  
AR  
ch  
G
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.  
This transistor is an electrostatic sensitive device.  
Please handle with caution.  
1
2002-02-06  

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