Datasheet > 2SK2350_06

2SK2350_06

更新时间： 2024-02-01 12:41:20

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器开关电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	731K
描述
Silicon N Channel MOS Type Switching Regulator, DC−DC Converter and Motor Drive Applications

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2SK2350_06 数据手册

2SK2350

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)

2SK2350

Switching Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z 4-V gate drive

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.26 Ω (typ.)

DS (ON)

: |Y | = 8 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 200 V)

DSS

: V = 1.5~3.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

200

±20

8.5

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (Note 1)

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

SC-67

2-10R1B

110

(Note 2)

TOSHIBA

Avalanche current

8.5

Weight: 1.9 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

4.16

62.5

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 50 V, T = 25°C (initial), L = 2.47 mH, R = 25 Ω, I

= 8.5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-21

12 3 4 5 6

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