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2SK2315TYUL PDF预览

2SK2315TYUL

更新时间: 2024-02-01 23:14:22
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
6页 2101K
描述
2A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET

2SK2315TYUL 技术参数

生命周期:TransferredReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.27
配置:SINGLE最小漏源击穿电压:60 V
最大漏极电流 (ID):2 A最大漏源导通电阻:0.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK2315TYUL 数据手册

 浏览型号2SK2315TYUL的Datasheet PDF文件第2页浏览型号2SK2315TYUL的Datasheet PDF文件第3页浏览型号2SK2315TYUL的Datasheet PDF文件第4页浏览型号2SK2315TYUL的Datasheet PDF文件第5页浏览型号2SK2315TYUL的Datasheet PDF文件第6页 
2SK2315  
Silicon N Channel MOS FET  
REJ03G1006-0200  
(Previous: ADE-208-1354)  
Rev.2.00  
Sep.07,2005  
Application  
High speed power switching  
Features  
Low on-resistance  
High speed switching  
Low drive current  
2.5 V gate drive device can from 3 V source.  
Suitable for DC-DC cove, power switch, solenoid drive  
Outline  
RENESAA  
(Package na
D
1. Gate  
2. Drain  
3. Source  
4. Drain  
G
Note: Marking is “TY”  
Renesas Technology Corp.  
Rev.2.00 Sep. 07, 2005 page 1 of 5  

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