是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.28 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 0.2 A |
最大漏源导通电阻: | 9 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ451ZK-TL-E | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ451ZK-TR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 20V, 9ohm, 1-Element, P-Channel, Silicon, Metal- | |
2SJ451ZK-TR-E | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ451ZK-UL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 20V, 9ohm, 1-Element, P-Channel, Silicon, Metal- | |
2SJ451ZK-UR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 20V, 9ohm, 1-Element, P-Channel, Silicon, Metal- | |
2SJ451ZK-UR | RENESAS |
获取价格 |
0.2A, 20V, 9ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ452 | HITACHI |
获取价格 |
Silicon P-Channel MOS FET | |
2SJ452 | TYSEMI |
获取价格 |
Low frequency power switching | |
2SJ452ZM | HITACHI |
获取价格 |
0.2A, 50V, 12ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ452ZM-01 | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal |