Datasheet > 2SJ461A-T1B-AT

2SJ461A-T1B-AT

更新时间： 2024-09-26 14:46:23

品牌	Logo	应用领域
日电电子 - NEC		开关光电二极管晶体管
页数	文件大小	规格书
5页	721K
描述
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SC-59, 3 PIN

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2SJ461A-T1B-AT 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	LEAD FREE, SC-59, 3 PIN	Reach Compliance Code：	compliant
风险等级：	5.68	Is Samacsys：	N
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	50 V
最大漏极电流 (ID)：	0.1 A	最大漏源导通电阻：	100 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	MATTE TIN
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SJ461A-T1B-AT 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ461A

P-CHANNEL MOSFET

FOR HIGH SPEED SWITCHING

DESCRIPTION

The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source.

The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in

digital circuit.

FEATURES

PACKAGE DRAWING (Unit: mm)

• Can be driven by a 2.5 V power source

• Not necessary to consider driving current because of its high

input impedance.

• Possible to reduce the number of parts by omitting the bias

resistor.

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SJ461A-T1B-AT

2SJ461A-T2B-AT

SC-59 (Mini Mold)

Marking: H19

Remark “-AT” indicates Pb-free (This product does not contain Pb

in external electrode and other parts.). “-T1B”, “-T2B”

indicates the unit orientation (8 mm embossed carrier

tape, 3,000 pcs/reel).

1: Source

2: Gate

3: Drain

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T

−50

m7.0

m0.1

m0.2

200

Drain

Drain Current (pulse) ^Note

Total Power Dissipation

Channel Temperature

Body

°C

Diode

Gate

T^ch

150

−55 to +150

Gate

Storage Temperature

T^stg

Protection

Diode

Source

Note PW ≤ 10 ms, Duty Cycle ≤ 50%

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D17902EJ1V0DS00 (1st edition)

Date Published February 2006 NS CP(K)

Printed in Japan

1995

12 3 4 5

中文翻译

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与2SJ461A-T1B-AT相关器件

型号	品牌	获取价格	描述	数据表
2SJ461A-T2B-AT	NEC	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal
2SJ461-L	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59
2SJ461-L-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59
2SJ461-T1B	NEC	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal
2SJ461-T1B-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59
2SJ462	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ462-T1	NEC	获取价格	Power Field-Effect Transistor, 2.5A I(D), 12V, 0.19ohm, 1-Element, P-Channel, Silicon, Met
2SJ463	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ463A	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ463A(0)-T1-A	RENESAS	获取价格	2SJ463A(0)-T1-A

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