5秒后页面跳转
捷配首页

Datasheet > 2SJ466
2SJ466 PDF预览

2SJ466

更新时间： 2024-11-17 22:33:23
品牌 Logo 应用领域
三洋 - SANYO 开关
页数 文件大小 规格书
4页 42K
描述
Ultrahigh-Speed Switching Applications

阅读下载

中文翻译

获取价格

2SJ466 数据手册

 浏览型号2SJ466的Datasheet PDF文件第2页浏览型号2SJ466的Datasheet PDF文件第3页浏览型号2SJ466的Datasheet PDF文件第4页 
Ordering number:ENN5491B  
P-Channel Silicon MOSFET  
2SJ466  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON resistance.  
· Ultrahigh-speed switching.  
· 4V drive.  
2128  
[2SJ466]  
· Enables simplified fabrication, high-density mount-  
ing, and miniaturization in end products due to the  
surface mountable package.  
8.2  
7.8  
6.2  
3
0.6  
1
2
0.3  
0.6  
1.0  
2.54  
1.0  
2.54  
5.08  
7.8  
10.0  
6.0  
1 : Gate  
2 : Source  
3 : Drain  
SANYO : ZP  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Drain-to-Source Voltage  
V
–30  
±20  
–35  
–140  
50  
V
V
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
A
D
PW≤10µs, duty cycle≤1%  
Tc=25˚C  
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
A
DP  
P
D
W
˚C  
˚C  
Tch  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
–30  
max  
Drain-to-Source Breakdown Voltage  
Gate-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
V
I
I
=–1mA, V =0  
D GS  
V
V
(BR)DSS  
(BR)GSS  
=±100µA, V =0  
±20  
G
DS  
I
V
V
V
V
I
=–30V, V =0  
GS  
=±16V, V =0  
DS  
–100  
±10  
µA  
µA  
V
DSS  
DS  
GS  
DS  
DS  
I
GSS  
V
(off)  
=–10V, I =–1mA  
D
=–10V, I =–18A  
D
=–18A, V =–10V  
GS  
–1.0  
16  
–2.0  
GS  
| yfs |  
Forward Transfer Admittance  
27  
S
20  
30  
30  
40  
mΩ  
mΩ  
D
Static Drain-to-Source ON-State Resistance  
R
(on)  
DS  
I
=–18A, V =–4V  
GS  
D
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
31000TS (KOTO) TA-2368 No.5491–1/4  
1234

中文翻译

下载PDF

与2SJ466相关器件

型号 品牌 获取价格 描述 数据表
2SJ467 ETC

获取价格
2SJ468 ETC

获取价格
2SJ469 ETC

获取价格

 		TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SO
2SJ471 HITACHI

获取价格

 		Silicon P Channel DV-L MOS FET High Speed Power Switching
2SJ471 RENESAS

获取价格

 		Silicon P Channel DV-L MOS FET
2SJ471-E RENESAS

获取价格

 		Silicon P Channel DV-L MOS FET
2SJ472-01 ETC

获取价格
2SJ472-01L FUJI

获取价格

 		Power MOSFET
2SJ472-01L_06 FUJI

获取价格

 		P-CHANNEL SILICON POWER MOSFET
2SJ472-01S FUJI

获取价格

 		P-CHANNEL SILICON POWER MOSFET

与2SJ466相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证