Datasheet > 2SJ473-01S

2SJ473-01S

更新时间： 2024-02-18 08:25:05

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	237K
描述
P-CHANNEL SILICON POWER MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SJ473-01S 数据手册

FUJI POWER MOSFET

2SJ473-01L,S

P-CHANNEL SILICON POWER MOSFET

FAP-III SERIES

Outline Drawings

Features

K-Pack(L)

K-Pack(S)

High speed switching

Low on-resistance

No secondary breakdown

Low driving power

High forward Transconductance

Avalanche-proof

Applications

Switching regulators

DC-DC converters

General purpose power amplifier

L-type

S-type

EIAJ

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

Equivalent circuit schematic

Item

Symbol

Rating

Unit

Drain-source voltage

VDS

-60

±7

Continuous drain current

Pulsed drain current

Drain(D)

ID(puls]

VGS

EAV

±28

Gate-source voltage

±20

Gate(G)

°C

Maximum avalanche energy *1

Maximum power dissipation(Tc=25

Operating and storage

temperature range

141.8

°C)

Tch

+150

-55 to +150

Source(S)

Tstg

*1 L=3.86mH, Vcc= -24V

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Test Conditions

Symbol

BVDSS

VGS(th)

IDSS

Item

ID=1mA

VDS= -60V

VGS=0V

-60

Drain-source breakdown voltage

VDS=VGS

-1.0

-1.5

-10

-0.2

-2.5

Gate threshold voltage

Zero gate voltage drain current

Tch=25°C

μA

-500

-1.0

Tch=125°C

±20V

VGS=

VDS=0V

IGSS

100

350

200

Gate-source leakage current

ID= -3.5A

VGS= -4V

mΩ

RDS(on)

260

150

5.0

550

200

110

Drain-source on-state resistance

VGS= -10V

ID=3.5A VDS= -25V

VDS= -25V

2.5

gfs

Forward transconductance

Input capacitance

Ciss

Coss

Crss

td(on)

830

300

170

VGS=0V

Output capacitance

Reverse transfer capacitance

Turn-on time

f=1MHz

VCC= -30V RG=10 Ω

ID= -7A

VGS= -10V

td(off)

Turn-off time

L=100 H

Tch=25°C

IAV

-7

Avalanche capability

VSD

trr

IF=2xIDR VGS=0V Tch=25°C

IF=IDR VGS=0V

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

-2.50

110

-3.8

μC

-di/dt=100A/μs Tch=25°C

Qrr

0.50

Thermal characteristics

Item

Min.

Typ.

Max. Units

Symbol

6.25

°C/W

Rth(ch-c)

Thermal resistance

125.0

°C/W

Rth(ch-a)

12 3 4

下载PDF

与2SJ473-01S相关器件

型号	品牌	描述	获取价格	数据表
2SJ474-01	ETC		获取价格
2SJ474-01L	FUJI	Power MOSFET	获取价格
2SJ474-01L_05	FUJI	P-CHANNEL SILICON POWER MOSFET	获取价格
2SJ474-01S	FUJI	P-CHANNEL SILICON POWER MOSFET	获取价格
2SJ475-01	FUJI	FAP-III Series	获取价格
2SJ475-01_06	FUJI	P-CHANNEL SILICON POWER MOSFET	获取价格