Datasheet > 2SJ477-01MR_06

2SJ477-01MR_06

更新时间： 2022-09-18 11:38:36

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	295K
描述
P-CHANNEL SILICON POWER MOSFET

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数据手册

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2SJ477-01MR_06 数据手册

2SJ477-01MR

FUJI POWER MOSFET

P-CHANNEL SILICON POWER MOSFET

FAP-III SERIES

Features

Outline Drawings

TO-220F

High speed switching

Low on-resistance

No secondary breakdown

Low driving power

High forward Transconductance

Avalanche-proof

Applications

Switching regulators

DC-DC converters

General purpose power amplifier

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

Item

Symbol

Rating

Unit

Equivalent circuit schematic

Drain-source voltage

VDS

-60

±25

Continuous drain current

Pulsed drain current

Drain(D)

ID(puls]

VGS

EAV

±100

Gate-source voltage

±20

Gate(G)

°C

Maximum avalanche energy *1

Maximum power dissipation(Tc=25

Operating and storage

temperature range

519.8

°C)

Tch

+150

-55 to +150

Source(S)

Tstg

*1 L=1.11mH, Vcc= -24V

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Test Conditions

Symbol

BVDSS

VGS(th)

IDSS

ID=1mA

VDS= -60V

VGS=0V

-60

VDS=VGS

-1.0

-1.5

-10

-0.2

-2.5

-500

-1.0

100

Tch=25°C

μA

Zero gate voltage drain current

Tch=125°C

±20V

VGS=

VDS=0V

IGSS

ID= -12.5A

VGS= -4V

110

mΩ

RDS(on)

VGS= -10V

7.5

15.0

ID=12.5A VDS= -25V

VDS= -25V

gfs

2000

3000

1050

680

Ciss

Coss

Crss

td(on)

700

450

VGS=0V

f=1MHz

VCC= -30V RG=10 Ω

ID= -25A

120

290

140

VGS= -10V

190

td(off)

L=100 H

Tch=25°C

-25

IAV

VSD

trr

IF=2xIDR VGS=0V Tch=25°C

IF=IDR VGS=0V

-2

-3

μC

160

-di/dt=100A/μs Tch=25°C

Qrr

0.9

Thermal characteristics

Item

Min.

Typ.

Max. Units

Symbol

3.125 °C/W

Rth(ch-c)

Thermal resistance

62.5

°C/W

Rth(ch-a)

www.fujielectric.co.jp/fdt/scd/

12 3 4

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