Datasheet > 2SJ472-01L_06

2SJ472-01L_06

更新时间： 2024-11-09 07:32:03

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
4页	245K
描述
P-CHANNEL SILICON POWER MOSFET

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中文翻译

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数据手册

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2SJ472-01L_06 数据手册

FUJI POWER MOSFET

2SJ472-01L,S

P-CHANNEL SILICON POWER MOSFET

FAP-III SERIES

Outline Drawings

Features

K-Pack(L)

K-Pack(S)

High speed switching

Low on-resistance

No secondary breakdown

Low driving power

High forward Transconductance

Avalanche-proof

Applications

Switching regulators

DC-DC converters

General purpose power amplifier

L-type

S-type

EIAJ

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

Equivalent circuit schematic

Item

Symbol

Rating

Unit

Drain-source voltage

VDS

-30

±5

Continuous drain current

Pulsed drain current

Drain(D)

ID(puls]

VGS

EAV

±20

Gate-source voltage

±16

Gate(G)

Maximum avalanche energy *1

Maximum power dissipation(Tc=25

Operating and storage

temperature range

191.8

°C)

°C

Tch

+150

-55 to +150

Source(S)

Tstg

*1 L=10.23mH, Vcc= -12V

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Test Conditions

Symbol

BVDSS

VGS(th)

IDSS

Item

ID=1mA

VDS= -30V

VGS=0V

-30

Drain-source breakdown voltage

VDS=VGS

-1.0

-1.5

-10

-0.2

-2.5

Gate threshold voltage

Zero gate voltage drain current

Tch=25°C

μA

-500

-1.0

Tch=125°C

±16V

VGS=

VDS=0V

IGSS

100

850

400

Gate-source leakage current

ID= -2.5A

VGS= -4V

mΩ

RDS(on)

480

210

3.0

250

150

Drain-source on-state resistance

VGS= -10V

ID=2.5A VDS= -25V

VDS= -25V

1.5

gfs

Forward transconductance

Input capacitance

Ciss

Coss

Crss

td(on)

380

230

130

VGS=0V

Output capacitance

Reverse transfer capacitance

Turn-on time

f=1MHz

VCC= -12V RG=10 Ω

ID= -5A

VGS= -10V

td(off)

Turn-off time

L=100 H

Tch=25°C

IAV

-5

Avalanche capability

VSD

trr

IF=2xIDR VGS=0V Tch=25°C

IF=IDR VGS=0V

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

-2.50

-3.8

μC

-di/dt=100A/μs Tch=25°C

Qrr

0.30

Thermal characteristics

Item

Min.

Typ.

Max. Units

Symbol

8.33

°C/W

Rth(ch-c)

Thermal resistance

125.0

°C/W

Rth(ch-a)

12 3 4

中文翻译

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