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2SJ479(S)TL PDF预览

2SJ479(S)TL

更新时间: 2024-11-14 13:02:11
品牌 Logo 应用领域
日立 - HITACHI 开关电源开关
页数 文件大小 规格书
7页 41K
描述
Power Field-Effect Transistor, 30A I(D), 30V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2SJ479(S)TL 数据手册

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2SJ479(L), 2SJ479(S)  
Silicon P Channel DV–L MOS FET  
High Speed Power Switching  
ADE-208-541  
1st. Edition  
Features  
Low on-resistance  
RDS(on) = 25 mtyp.  
4V gate drive devices.  
High speed switching  
Outline  
LDPAK  
4
4
D
1
2
3
1
G
2
3
1. Gate  
2. Drain  
3. Source  
4. Drain  
S

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