2SJ484

更新时间： 2024-11-14 06:25:31

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2SJ484 数据手册

2SJ484

Silicon P Channel MOS FET

REJ03G0868-0300

(Previous: ADE-208-501A)

Rev.3.00

Sep 07, 2005

Description

High speed power switching

Features

•

Low on-resistance

R_{DS (on)}= 0.18 Ω typ. (at V_GS= –10 V, I_D= –1 A)

Low drive current

High speed switching

•

4 V gate drive devices.

Outline

RENESAS Package code: PLZZ0004CA-A

(Package name: UPAK

)

1. Gate

2. Drain

3. Source

4. Drain

Note: Marking is “WY”.

*UPAK is a trademark of Renesas Technology Corp.

Rev.3.00 Sep 07, 2005 page 1 of 6

12 3 4 5 6 7

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型号	品牌	替代类型	描述	数据表
2SJ484	HITACHI	功能相似	Silicon P-Channel MOS FET High Speed Power Switching

型号	品牌	获取价格	描述	数据表
2SJ484WY	HITACHI	获取价格	Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal
2SJ484WYTL	HITACHI	获取价格	Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal
2SJ484WYTL	RENESAS	获取价格	2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ484WYTL-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ484WYTR	RENESAS	获取价格	2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ484WYTR	HITACHI	获取价格	2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ484WYTR-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ484WYUL	HITACHI	获取价格	Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal
2SJ484WYUR	RENESAS	获取价格	暂无描述
2SJ485	SANYO	获取价格	Ultrahigh-Speed Switching Applications