2SJ484WYUR

更新时间： 2024-11-14 13:04:23

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

2SJ484WYUR 数据手册

2SJ484

Silicon P Channel MOS FET

REJ03G0868-0300

(Previous: ADE-208-501A)

Rev.3.00

Sep 07, 2005

Description

High speed power switching

Features

•

Low on-resistance

R_{DS (on)}= 0.18 Ω typ. (at V_GS= –10 V, I_D= –1 A)

Low drive current

High speed switching

•

4 V gate drive devices.

Outline

RENESAS Package code: PLZZ0004CA-A

(Package name: UPAK

)

1. Gate

2. Drain

3. Source

4. Drain

Note: Marking is “WY”.

*UPAK is a trademark of Renesas Technology Corp.

Rev.3.00 Sep 07, 2005 page 1 of 6

12 3 4 5 6 7

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
2SJ485	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SJ485TP	SANYO	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 4A I(D) \| TO-251VAR
2SJ485TP-FA	SANYO	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 4A I(D) \| TO-252VAR
2SJ486	HITACHI	获取价格	Silicon P Channel MOS FET Low FrequencyPower Switching
2SJ486	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ486	TYSEMI	获取价格	Low on-resistance
2SJ486ZU	HITACHI	获取价格	Power Field-Effect Transistor, 0.3A I(D), 30V, 1.2ohm, 1-Element, P-Channel, Silicon, Meta
2SJ486ZU-01	HITACHI	获取价格	0.3 A, 30 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ486ZU-TL	HITACHI	获取价格	Power Field-Effect Transistor, 0.3A I(D), 30V, 1.2ohm, 1-Element, P-Channel, Silicon, Meta
2SJ486ZU-TL	RENESAS	获取价格	0.3A, 30V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET